Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation
ZH Jin,BA Gururaj,MWY Yeung,HS Kwok,M Wong
DOI: https://doi.org/10.1109/16.641366
IF: 3.1
1997-01-01
IEEE Transactions on Electron Devices
Abstract:Hall effect measurement was employed to study the isothermal annealing of boron or phosphorus implanted polycrystalline Si1-xGex thin films, with x varying from 0.3-0.55. X-ray diffraction and cross-sectional transmission electron microscopy were used to study the crystal structure, whereas X-ray photoelectron spectroscopy was used to determine the film composition and the chemical bonding states of the elements. In low-temperature (less than or equal to 600 degrees C) annealing, the conductivity, the dopant activation, and the Hall effect mobility decreased during extended annealing. The effective activation of phosphorus was less than 20% and decreased with increasing Ge content, Boron activation could reach above 70%. It was also found that Si1-xGex could be oxidized at 600 degrees C in a conventional furnace even with N-2 protection, especially for phosphorus doped films with high Ge content. Consequently, a low-temperature SiO2 capping layer is necessary during extended annealing.