Abstract:Joints between reaction-bonded and recrystallized silicon carbide materials have been obtained using a reaction-forming approach. The formation mechanism of these reaction-bonded joints was analyzed and the microstructure of the joint areas, as well as the fracture morphology, was observed by optical and scanning electron microscopy. The mechanical and electrical properties of the joints were also measured. This study suggests that a good contact interlayer is formed between joints and the parent materials. The flexural strength and the electrical resistivity of the silicon or silicon carbide parent materials are not significantly affected by the reaction-forming process. The latter provides a way for optimizing the microstructure and composition of joint layers and obtaining high performance joints. (c) 2007 Published by Elsevier B.V.

Reaction forming of joints in silicon carbide ceramic materials