Study on movement of charged particles and etched profile on target surface during magnetron sputtering

于贺,王涛,吴志明,蒋亚东,姜晶,靖红军
IF: 4
2009-01-01
Vacuum
Abstract:Based on the FEA of static electromagnetic field distribution on target surface in magnetron sputtering system under loading conditions, the movement path of single charged particle was simulated and showed an upward spiral. Meanwhile, the distribution of particle beams on target surface and etched profile were simulated. Then, the measured and simulated profiles of etched target surface were compared,and the results showed that they are coincided.
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