Simulation of Surface Morphology Evolution of Sputtered Copper Target

Hu Wei,Rencheng Wang
DOI: https://doi.org/10.3969/j.issn.1672-7126.2012.10.10
2012-01-01
Abstract:The sputter etching of the copper target,exemplified with the asteroids physical vapor deposition magnetron sputtering setup made in USA,was approximated,modeled,and simulated with the software package ANSYS.The influencing factors,such as the complicated magnetic field distributions and the ion trajectory,were evaluated with appropriate approximations.A novel simulation method was developed to evaluate the evolution of the surface morphology in the sputtering,based on the assumption that the sputtering rate is proportional to the horizontal component of the magnetic field on the target surface.The simulated results were found to be in good agreement with those of the experimental measurement.
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