Abstract:Improving the mechanical strength of Czochralski (CZ) silicon is of significance for increasing the manufacturing yield of integrated circuits. In this work, we have comparatively investigated the dislocation gliding behaviors in the conventional CZ silicon, nitrogen (N)-doped CZ silicon, germanium (Ge)-doped CZ silicon as well as Ge and N co-doped CZ silicon subjected to the indentations for 30 min at different temperatures in the range of 850–1050 °C with an interval of 50 °C. It is found that the suppressing effect of N-doping on the dislocation gliding is strongest at 950 °C and becomes slightly weakened at higher temperatures, while Ge-doping does not exert a remarkable suppressing effect on the dislocation gliding until the temperature exceeds 950 °C. The co-doping of N and Ge impurities takes both advantages of N- and Ge-doping to suppress the dislocation gliding in CZ silicon at the aforementioned temperatures. More importantly, at 1000 and 1050 °C that are the typical processing temperatures for integrated circuits, the N and Ge co-doping exhibits a stronger suppressing effect on the dislocation gliding in CZ silicon than the single Ge- or N-doping. This indicates that the mechanical strength of CZ silicon in terms of the resistance of dislocation gliding at a high temperature can be further improved by co-doping Ge and N impurities. It is believed that the N-doping can result in the formation of larger grown-in oxygen precipitates and N–O complex-related pinning agents within the dislocations to suppress the dislocation gliding at 850–1050 °C with the strongest suppressing effect at 950 °C, while the suppressing effect of Ge-doping on the dislocation gliding at the temperatures exceeding 950 °C is tentatively ascribed to the formation of Ge–O complexes near the front of the dislocation lines.

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Grown-In Defects in Heavily Boron-Doped Czochralski Silicon

Grown-in Defects in Heavily Phosphorus-Doped Czochralski Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

Preface of 16th International Conference on Defects, Recognition, Imaging and Physics in Semiconductors

Formation of A Denuded Zone in Nitrogen-Doped Czochralski Silicon Wafer Treated by Ramping Anneals

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Photoluminescence of Dislocations in Czochralski Silicon Induced During Crystal Growth

Optical anisotropy and strain-induced birefringence in dislocation-free silicon single crystals

Low-temperature Annealing of Polycrystalline Si/sub 1-X/ge/sub X/ after Dopant Implantation

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Dislocation proliferation at the growth crystal/seed interface of physical vapor transport-grown 4H-SiC crystals

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Doping-dependent Nucleation of Basal Plane Dislocations in 4H-Sic

Oxygen Precipitate Nucleation in Heavily Antimony-Doped Czochralski Silicon

Effects of Co-Doping Nitrogen and Germanium on Dislocation Gliding in Czochralski Silicon: Implication for Improving Mechanical Strength

X-Ray Topographic Investigation of Dislocations in Czochralski-Grown Alexandrite (beal2o4cr) Single-Crystal

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Defects in Ge-doped Cz-Si Annealed under High Stress

(Invited) Defects in Cast-Mono Crystalline Silicon