Design and Characterization of A Cmos Compatible Poly-Sige Lowg Capacitive Accelerometer

L. Wen,L. Haspeslagh,J. De Coster,A. Witvrouw,R. Puers
DOI: https://doi.org/10.1016/j.proeng.2010.09.215
2010-01-01
Procedia Engineering
Abstract:This paper presents the design and characterization of a CMOS compatible low-g capacitive accelerometer, fabricated in a low thermal budget poly-SiGe MEMS technology. The out-of-plane single axial device features a large effective capacitive surface, low cross talk and a robust beam suspension. The structural layer thickness of the accelerometer is 4 mu m. First, the accelerometer design is described, followed by an overview of the fabrication and characterization process. The released devices have been electro-statically analyzed, with an impedance analyzing system, in order to verify the DC responses of the devices to bias voltage sweeps. Then, the devices are encapsulated in a DIL (Dual-in Line) package for the vibration and angular characterizations. The dynamic responses of the poly-SiGe devices are compared to those of a piezoelectric reference accelerometer. The results demonstrate for the first time the achievability of fabricating large sensing area, low g accelerometers with the above-CMOS poly-SiGe technology. (C) 2009 Published by Elsevier Ltd.
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