Abstract:During the fabrication of an indium-gallium-zinc oxide (IGZO) thin film transistor (TFT), the thermal process was used to reduce the resistivity of IGZO. The annealing temperature was found to have great influence on the transistor characteristics. At an optimized heat-treatment temperature, the depletion-mode IGZO TFT was fabricated with steeper subthreshold slope, higher filed-effect mobility and acceptable turn-on voltage. And the relatively conductive IGZO could directly replace the indium tin oxide as the transparent electrode of the organic light-emitting diode (OLED), reducing the mask count of the backplane for the active-matrix OLED display. INTRODUCTION Thin film transistor (TFT) based on metal oxide (MO), especially, indium-gallium-zinc oxide (IGZO), is considered as a good candidate to fabricate large area backplane for active-matrix organic light-emitting diode (AMOLED) display, due to its high mobility, good uniformity and low off-state current [1]. Our previous study [2] suggested that the resistivity (ρ) of IGZO highly depended on the heat-treatment conditions, such as annealing ambience, temperature, duration and gas permeability of IGZO cover, while the thermal process was often inevitable during the fabrication of IGZO TFT. With the active layer of IGZO covered with the gas-permeable silicon oxide (SiOx), the TFT was subjected to a serious anneals in an oxygen-deficient nitrogen (N2) ambience. With the increasing temperature, although the mobility was enhanced, the turn-on voltage (Von) became more and more negative. At an optimized temperature, the depletion-mode (DM) IGZO TFT with steeper subthreshold slope, higher filed-effect mobility and acceptable turn-on voltage was fabricated. Furthermore, such annealing-induced conductive IGZO source/drain regions can be directly used to replace the indium tin oxide (ITO) as the transparent electrode of OLED, reducing the mask count of AMOLED backplane. Annealing-Induced DM IGZO TFT Shown in Figure 1 is the evolution of the schematic cross-section of an IGZO TFT. A gate dielectric of 100 nm silicon oxide (SiOx) was first thermally grown on an n+ silicon substrate, which served as the gate electrode. 10 or 20 nm IGZO film was then room-temperature sputtered using a target of In2O3:Ga2O3:ZnO = 1:1:1 mol% in an atmosphere of 10% oxygen (O2) and 90% argon (Ar). After the patterning of the active-island using the hydrofluoric acid, a passivation layer of 300 nm SiOx was deposited at 300 oC in a plasma-enhanced chemical vapor deposition (PECVD) reactor. The tetraethylorthosilicate (TEOS) and O2 were used as the source gases. The contact holes were then opened and the resulting structure was subjected to a series of anneals, as shown in Figure 1a. Finally, 300 nm aluminum (Al) was deposited and patterned into electrodes (Fig. 1b). These TFTs were measured using an Agilent 4156C semiconductor parameter analyzer. n+ Si 100nm SiOx 300nm SiOx

Indium Oxide Thin‐film Transistor by Reactive Ion Beam Assisted Deposition

Fabrication and performance of indium oxide based transparent thin film transistors

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

In 2 O 3 透明薄膜晶体管的制备及其电学性能的研究

High mobility ultra-thin crystalline indium oxide thin film transistor using atomic layer deposition

Fabrication of Indium-Tin-Oxide Thin-Film Transistor Using Anodization

Enhancement of Electrical Performance in In2o3 Thin-Film Transistors by Improving the Densification and Surface Morphology of Channel Layers

Atomic Layer Deposition of an Indium Gallium Oxide Thin Film for Thin-Film Transistor Applications

Electrical Properties of Indium Aluminum Zinc Oxide Thin Film Transistors

Atomic-Layer-Deposition of Indium Oxide Nano-films for Thin-Film Transistors

Amorphous Semi-Insulating Al-doped In2O3 Growth by Atomic Layer Deposition for Thin-Film Transistors

Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application

Ultrathin In2O3 Thin-Film Transistors Deposited from Trimethylindium and Ozone

Comparative Study of Indium Oxide Films for High‐Mobility TFTs: ALD, PLD and Solution Process

Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition

Investigations of mammary and uterine blood flow in relation to milk yield, postpartum disease, and pregnancy result in dairy cows.

Sol–gel processed indium zinc oxide thin film and transparent thin-film transistors

Annealing-Induced Depletion-Mode Indium-Gallium-Zinc Oxide Thin-Film Transistor and Its Application to Active-Matrix Organic Light-Emitting Diode Display

Plasma-enhanced atomic layer deposition of Sn-doped indium oxide semiconductor nano-films for thin-film transistors

Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors

Influence of indium doping on electrical performance of gallium oxide thin-film transistors