Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Synthesis and characterization of hydrogenated amorphous silicon-carbon films with blue-green emission

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Red–green–blue Light Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by Using Organic Compound Xylene As Carbon Source

Blue Light Emission from Hydrogenated Amorphous Silicon Carbide Prepared by Xylene Source in Plasma-Enhanced Chemical Vapour Deposition System

Blue Light Emission From Hydrogenated Amorphous Silicon Carbide Produced By Organic Source

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Visible Electroluminescence from Amorphous Hydrogenated Silicon Carbide Prepared by Using Organic Carbon Source

Structural properties of hydrogenated amorphous silicon carbide alloys

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Full Color Light Emission from Amorphous SiCx:H with Organic–inorganic Structures

Optical Study of Silicon-Containing Amorphous Hydrogenated Carbon

Optical And Electrical Properties Of A-Si(1-X)Cx : H And Mu C-Si1-Xcx : H Films Prepared By Using Methane And Xylene Source

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

Amorphous SiCx:H and SiCxNy:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Microstructures and Photoluminescence of Hydrogenated Amorphous Carbon Films Produced by Using Organic Hydrocarbon Source

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

Optical Properties of Hydrogenated Silicon-Carbon Films and Greatly Enhanced Photoluminescence by Nanowire Structure

Highly luminescent hydrogenated amorphous carbon (a-C:H) thin films