Abstract:Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device applications requires a connection between a metal junction and a TMD semiconductor. Hence, a complete understanding of electronic band alignments and the potential barrier heights governing the transport through a metal-TMD-metal junction is critical. But, there is a knowledge gap; it is not clear how the energy bands of a TMD align while in contact with a metal as a function of the number of layers. In pursuit of removing this knowledge gap, we have performed conductive atomic force microscopy (CAFM) of few layered (1-5) MoS2 immobilized on ultra-flat conducting Au surfaces (root mean square (RMS) surface roughness <0.2 nm) and indium tin oxide (ITO) substrate (RMS surface roughness <0.7 nm) forming a vertical metal (conductive-AFM tip)-semiconductor-metal device. We have observed that the current increases as the number of layers increases up to 5 layers. By applying Fowler-Nordheim tunneling theory, we have determined the barrier heights for different layers and observed that the barrier height decreases as the number of layers increases. Using density functional theory (DFT) calculation, we successfully demonstrated that the barrier height decreases as the layer number increases. By illuminating the TMDs on a transparent ultra-flat conducting ITO substrate, we observed a reduction in current when compared to the current measured in the dark, hence demonstrating negative photoconductivity. Our study provides a fundamental understanding of the local electronic and optoelectronic behaviors of TMD-metal junction, and may pave an avenue toward developing nanoscale electronic devices with tailored layer-dependent transport properties.

Strong Interface P-Doping and Band Bending in C60 on MoOx

Tuning of C-60 Energy Levels Using Orientation-Controlled Phthalocyanine Films

Evolution of the Electronic Structure of C60/La0.67Sr0.33MnO3 Interface

Energy Level Evolution and Oxygen Exposure of Fullerene/Black Phosphorus Interface.

Fullerene (C-60) Interlayer Modification on the Electronic Structure and the Film Growth of 2,7-Diocty[1]benzothieno-[3,2-b]benzothiophene on Sio2

Spinterface Induced Modification in Magnetic Properties in Co40Fe40B20/Fullerene Bilayers

Electron Band-Structure Of C-60 Single-Crystal Using Synchrotron-Radiation

A systematic spectroscopic study of the FePc–Si interfaces

Study of the Conductance and Structure Characteristics of C60/Sb Bilayers

Electronic structure and orientational phase transition of K3C60

Hybridization-induced Oscillatory Magnetic Polarization of C60 Orbitals at the C60/Fe(001) Interface

Tuning optical properties of monolayer MoS2 through the 0D/2D interfacial effect with C60 nanoparticles

Understanding the Interface Dipole of Copper Phthalocyanine (CuPc)/C60: Theory and Experiment

Influence of the aggregate state on band structure and optical properties of C60 computed with different methods

Equilibrium configurations and electronic structure of fullerene ultrathin films on SrTiO3(001) surface

Electronic Structures in C60-Polymers (review)

Equilibrium configurations and electronic structure of Fullerene ultrathin films on SrTiO 3 (001) surface

In Situ Conductivity Study of the Phase Transition in Sb-doped C60

Layer Dependent Interfacial Transport and Optoelectrical Properties of MoS2 on Ultra-flat Metals

Electronic, optical and transport properties of Zn-Porphyrin-C60 MOFs: A combined periodic and cluster modeling.

Structure and conductivity of C60/Pd multilayer films