Abstract:Modification by ultra-thin fullerene (C-60) insertion layer of about 1 monolayer on the electronic structure and the film growth of 2,7-diocty[1]benzothieno-[3,2-b] benzothiophene (C8-BTBT) on silicon oxide (SiO2) is investigated using ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD). It is found that the ultra-thin C-60 insertion layer doesn't induce an ambipolar charge transport characteristic but it indeed lifts up the energy levels of C8-BTBT, resulting in p-doping and hole accumulation at the semiconductor-dielectric interface. The charge transfer from trap states residing in the band gap of C8-BTBT to the lowest unoccupied molecular orbital (LUMO) of C-60 most likely leads to a decrease of threshold voltage for corresponding organic field effect transistors (OFETs) based on such a configuration. Band bending and decrease of the ionization potential (IP) are observed in the C8-BTBT film attributed to the increasing ordering of molecular orientation with the deposition of C8-BTBT. The HOMO downward shift is clearly bigger with the C-60 insertion layer than that without. A typical Volmer-Weber (VW) growth mode is detected due to the weaker van der Waals interaction between C8-BTBT and the underlying layer of C-60/C8-BTBT than that between the C8-BTBT molecules. Compared to without C-60 interlayer, the molecular packing is a little more disordered at low coverages, resulting in more C8-BTBT molecules to lean away from the interface normal. The C8-BTBT film in such a structure phase has the HOMO closer to the E-F than that at an almost perfectly vertically standing up configuration. Our results show that the introduction of C-60 insertion layer lifts up the HOMO of C8-BTBT and improves the energy level alignment at the interface.

Energy Level Evolution and Oxygen Exposure of Fullerene/Black Phosphorus Interface.

Surface Chemistry of Black Phosphorus under a Controlled Oxidative Environment

Photo-oxidative Degradation and Protection Mechanism of Black Phosphorus: Insights from Ultrafast Dynamics.

Tuning of C-60 Energy Levels Using Orientation-Controlled Phthalocyanine Films

Interface Energy-Level Alignment between Black Phosphorus and F16CuPc Molecular Films

Stabilizing Black Phosphorus Nanosheets Via Edge-Selective Bonding of Sacrificial C-60 Molecules

A First Principles Study of the Interaction Between Two-Dimensional Black Phosphorus and Al2O3dielectric

Charge Transfer at the PTCDA/Black Phosphorus Interface

Identification of Lattice Oxygen in Few-Layer Black Phosphorous Exfoliated in Ultrahigh Vacuum and Largely Improved Ambipolar Field-Effect Mobilities by Hydrogenation and Phosphorization

Photooxidation of PC60BM: new insights from spectroscopy

Surface Functionalization of Black Phosphorus by Cu: Effective Electron Doping and Enhanced Photoresponse

Fullerene (C-60) Interlayer Modification on the Electronic Structure and the Film Growth of 2,7-Diocty[1]benzothieno-[3,2-b]benzothiophene on Sio2

Water‐Catalyzed Oxidation of Few‐Layer Black Phosphorous in a Dark Environment

Surface and interface control of black phosphorus

Unified understanding to the rich electronic-structure evolutions of 2D black phosphorus under pressure

Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects

Band-edge Engineering Via Molecule Intercalation: a New Strategy to Improve Stability of Few-Layer Black Phosphorus

Electrosynthesis of an Improbable Directly Bonded Phosphorene‐Fullerene Heterodimensional Hybrid toward Boosted Photocatalytic Hydrogen Evolution

Surface Buckling of Black Phosphorus: Determination, Origin, and Influence on Electronic Structure

Black phosphorus: an efficient co-catalyst for charge separation and enhanced photocatalytic hydrogen evolution

2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices