Spinterface Induced Modification in Magnetic Properties in Co40Fe40B20/Fullerene Bilayers

Purbasha Sharangi,Esita Pandey,Shaktiranjan Mohanty,Sagarika Nayak,Subhankar Bedanta

DOI: https://doi.org/10.48550/arXiv.2102.03914

2021-11-07

Abstract:Organic semiconductor/ferromagnetic bilayer thin films can exhibit novel properties due to the formation of the spinterface at the interface. Buckminsterfullerene (C60) has been shown to exhibit ferromagnetism at the interface when it is placed next to a ferromagnet (FM) such as Fe or Co. Formation of spinterface occurs due to the orbital hybridization and spin polarized charge transfer at the interface. In this work, we have demonstrated that one can enhance the magnetic anisotropy of the low Gilbert damping alloy CoFeB by introducing a C60 layer. We have shown that anisotropy increases by increasing the thickness of C60 which might be a result of the formation of spinterface. However, the magnetic domain structure remains same in the bilayer samples as compared to the reference CoFeB film.

Materials Science

What problem does this paper attempt to address?

### What problems does this paper attempt to solve?

This paper aims to study how to enhance the magnetic anisotropy by forming a spinterface after introducing a fullerene (C₆₀) layer in a CoFeB (cobalt - iron - boron alloy) thin film. Specifically, the author hopes to verify the following points through experiments:

1. **Enhancement of magnetic anisotropy**: By introducing C₆₀ layers of different thicknesses, study their influence on the magnetic anisotropy of the CoFeB thin film. The author found that as the thickness of the C₆₀ layer increases, the magnetic anisotropy is significantly enhanced.

2. **Change in magnetic domain structure**: Compare the magnetic domain structures of a single - layer CoFeB thin film and a CoFeB/C₆₀ bilayer thin film, and explore whether the formation of spinterface will lead to a significant change in the magnetic domain structure. The results show that the magnetic domain structure does not change significantly after introducing the C₆₀ layer.

3. **Change in Gilbert damping parameter**: Through frequency - dependent ferromagnetic resonance (FMR) measurement, study the change in the Gilbert damping parameter (α). The results show that as the thickness of the C₆₀ layer increases, the Gilbert damping parameter also increases.

4. **Spin - polarized charge transfer mechanism**: Explore the orbital hybridization and spin - polarized charge transfer mechanism between CoFeB and C₆₀, and explain the formation of spinterface and its influence on magnetic properties.

### Main research background

Organic semiconductor/ferromagnet bilayer thin films can exhibit novel physical properties due to the formation of spinterface at the interface. In particular, fullerene (C₆₀) can exhibit ferromagnetism at the interface when in contact with a ferromagnet (such as Fe or Co). This phenomenon is caused by orbital hybridization and spin - polarized charge transfer at the interface.

### Research significance

This research reveals that the magnetic anisotropy of CoFeB thin films can be enhanced by introducing a C₆₀ layer, which provides new ideas for the future development of spintronic devices based on low - damping materials. In addition, the research also lays the foundation for further understanding the properties of spinterface and its formation mechanism.

### Formula summary

1. **Ferromagnetic resonance signal fitting formula**:
\[
\text{FMR signal} = \frac{A_1}{4\Delta H(H - H_{\text{res}})} \left( \frac{(4(H - H_{\text{res}}))^2 + (\Delta H)^2}{(4(H - H_{\text{res}}))^2 + (\Delta H)^2} \right) - A_2 \left( \frac{(\Delta H)^2 - 4(H - H_{\text{res}})^2}{(4(H - H_{\text{res}}))^2 + (\Delta H)^2} \right) + \text{offset}
\]

2. **Relationship between resonance field and frequency**:
\[
f = \frac{\gamma}{2\pi} \sqrt{(H_K + H_{\text{res}})(H_K + H_{\text{res}} + 4\pi M_{\text{eff}})}
\]
where \(\gamma\) is the gyromagnetic ratio, \(g\) is the Landé factor, \(\mu_B\) is the Bohr magneton, \(\hbar\) is the reduced Planck constant, and \(H_K\) is the anisotropy field.

3. **Relationship between linewidth and frequency**:
\[
\Delta H = \Delta H_0 + \frac{4\pi \alpha f}{\gamma}
\]
where \(\Delta H_0\) is the inhomogeneous linewidth broadening, and \(\alpha\) is the Gilbert damping parameter.

### Conclusion

By introducing a C₆₀ layer, the magnetic anisotropy of the CoFeB thin film is significantly enhanced, while the magnetic domain structure remains unchanged. These results provide theoretical and experimental bases for the development of high - performance spintronic devices and lay the foundation for further research on the properties of spinterface.