Spin pumping and inverse spin Hall effect in CoFeB/C$_{60}$ bilayers

Purbasha Sharangi,Braj Bhusan Singh,Sagarika Nayak,Subhankar Bedanta
DOI: https://doi.org/10.48550/arXiv.2106.06829
2021-11-08
Abstract:Pure spin current based research is mostly focused on ferromagnet (FM)/heavy metal (HM) system. Because of the high spin orbit coupling (SOC) these HMs exhibit short spin diffusion length and therefore possess challenges for device application. Low SOC (elements of light weight) and large spin diffusion length make the organic semiconductors (OSCs) suitable for future spintronic applications. From theoretical model it is explained that, due to $\pi$ - $\sigma$ hybridization the curvature of the C$_{60}$ molecules may increase the SOC strength. Here, we have investigated spin pumping and inverse spin hall effect (ISHE) in CoFeB/C$_{60}$ bilayer system using coplanar wave guide based ferromagnetic resonance (CPW-FMR) set-up. We have performed angle dependent ISHE measurement to disentangle the spin rectification effects for example anisotropic magnetoresistance, anomalous Hall effect etc. Further, effective spin mixing conductance (g$_{eff}^{\uparrow\downarrow}$) and spin Hall angle ($\theta_{SH}$) for C$_{60}$ have been reported here. The evaluated value for $\theta_{SH}$ is 0.055.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explore and verify the phenomena and mechanisms of spin pumping and inverse spin Hall effect (ISHE) in the CoFeB/C₆₀ bilayer structure. Specifically, the researchers hope to experimentally verify the following points: 1. **Application potential of low - spin - orbit - coupling materials**: Traditionally, research on spin currents has mainly focused on ferromagnetic (FM) and heavy - metal (HM) systems because these heavy metals have high spin - orbit coupling (SOC), but their short spin - diffusion lengths limit their applications in devices. Therefore, the researchers hope to find a material with a relatively long spin - diffusion length and suitable for future spintronics applications. 2. **Performance of C₆₀ in spintronics**: Organic semiconductors (OSCs), especially fullerene C₆₀, are considered potential spintronics materials due to their low spin - orbit coupling, long spin - diffusion length, and weak hyperfine interactions. However, the low SOC of C₆₀ limits its efficient spin - to - charge - current conversion ability. Studies have shown that when C₆₀ is deposited on a substrate, its SOC may be enhanced, thereby improving its spin - transport performance. 3. **Specific measurements of spin pumping and inverse spin Hall effect**: Using the coplanar waveguide (CPW) microwave excitation method, the researchers measured the spin - pumping and ISHE signals in the CoFeB/C₆₀ bilayer structure with different thicknesses of the C₆₀ layer. They also carried out angle - dependent ISHE measurements to distinguish the influence of spin - rectification effects (such as anisotropic magnetoresistance and anomalous Hall effect) on the ISHE signal. 4. **Calculation of key parameters**: The researchers calculated the effective spin - mixing conductance (\( g_{\uparrow \downarrow}^{\text{eff}} \)) and the spin - Hall angle (\( \theta_{\text{SH}} \)), and explored the trends of these parameters with the change in the thickness of the C₆₀ layer. ### Research background and significance The research background of this paper lies in the importance of spin currents in highly efficient spintronic devices. Spin pumping is an effective way to create pure spin currents in ferromagnetic/non - magnetic systems through microwave excitation, and the inverse spin Hall effect can convert such spin currents into voltage signals. By studying these phenomena in the CoFeB/C₆₀ bilayer structure, the researchers hope to provide new material choices and technical means for future spintronic devices. ### Main conclusions - Significant spin - pumping and ISHE signals were observed at the CoFeB/C₆₀ interface. - As the thickness of the C₆₀ layer increases, the spin - pumping voltage, damping constant, and effective spin - mixing conductance all show a monotonically increasing trend. - The calculated C₆₀ spin - Hall angle is 0.059, which is higher than previously reported values. - These results indicate the potential application value of C₆₀ in spintronics and provide a basis for further understanding the curvature - enhanced spin - orbit - coupling mechanism. Through these studies, the paper provides important experimental evidence and theoretical support for the development of highly efficient spintronic devices based on organic semiconductors.