Abstract:Various methods of generating high stress in thin plasma enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) films are reported. Besides the mainstream variation of plasma power and other process parameters, novel techniques such as creation of high density layers in multilayer PECVD structures or exposure of SiN films to ultraviolet radiation are shown to increase intrinsic film stress. Thin PECVD SiN films have been analyzed by a variety of analytical techniques including Fourier transform infrared spectroscopy, x-ray reflectivity (XRR), time of flight secondary ion mass spectrometry, and transmission electron microscopy to collect data on bonding, density, chemical composition, and film thickness. The level of bonded hydrogen as well as film density has been found to correlate with film stress. Creation of multilayer structures and high density layers help to build up more stress compared to a standard single layer film deposition. Both the density and number of layers in a film, characterized by XRR, affect the stress. Higher density layers affect diffusion profiles and show impurity oscillations corresponding to a multilayer film structure. Ultraviolet cure allows the film to achieve higher level of tensile stress at relatively low temperatures (400–500°C), comparable to the result of film high temperature annealing.

Influences of Electron Energy Stateon the Residual Stress of Silicon Nitride Thin Films Deposited by PECVD

Experimental Study of the Internal Stress of Silicon Nitride Films Deposited by PECVD

&Lt;title>study on the Stress of Silicon Nitride Thin Films Prepared by PECVD</title>

Influences Of Process Parameters Of Low Frequency Pecvd Technology On Intrinsic Stress Of Silicon Nitride Thin Film

Influences of Gas Flow Ratio and Substrate Temperature on the Characteristics of Silicon Nitride Films Prepared by Low-frequency PECVD Technology

Spectroscopic Analysis of Film Stress Mechanism in PECVD Silicon Nitride

Research on Some Key Mechanical Properties of Silicon Nitride Thin Films Deposited by PECVD

Low Stress Silicon Nitride Thin Film Deposition by PECVD

Study of Thin Films of Silicon Nitride Deposited by PECVD and Beam Properties

Influences of Vacuum Annealing on Properties of Silicon Nitride Films Prepared by Low-frequeny PECVD Technology

Stress Control and Anti-erosion Characteristics of PECVD SiC Thin Film

Methods of producing plasma enhanced chemical vapor deposition silicon nitride thin films with high compressive and tensile stress

Residual Stress in Amorphous and Nanocrystalline Si Films Prepared by PECVD with Hydrogen Dilution

Effect of deposition condition on residual stress of iron nitride thin films prepared by magnetron sputtering and ion implantation

Stress Control of Silicon Nitride Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Investigation of PECVD SiC nano film

Analysis of Low Frequency SiN Film on the Effect of Stress Level and Deposition Parameters

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Study on the Performance of PECVD Silicon Nitride Thin Films

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

Study of SiNx Thin Film Character with Gas Flow Rate in PECVD