Abstract:Silicon-rich silicon nitride film was deposited by plasma enhanced chemical vapor deposition (PECVD) on (100)-oriented monocrystalline silicon, according to silicon solar cell process. Photoluminescence (PL) performance of the films at annealing temperatures in N 2 ambient was studied, showing that temperatures had great effect on the characteristics. Excited by 325 nm line, PL from defect-related states was only observed in the film and Si clusters has not been formed at annealing temperature 900°C. After annealed at different temperature, PL intensity decreased with increasing temperature. PL peak originated from defect energy Si dangling bond (K center). In this work, At 900°C, disappearance of PL peak was attributed to increasing non-radiation recombination and silicon clusters has not been formed. Structure of silicon nitride has been measured by X-ray photo-electron spectroscopy (XPS) showing binding energy at 101.8 eV and indicated that silicon phase has not been separated from silicon nitride. Infrared (FTIR) measurement provided a good confirm to PL analysis.

Influences of Vacuum Annealing on Properties of Silicon Nitride Films Prepared by Low-frequeny PECVD Technology

Influences of Gas Flow Ratio and Substrate Temperature on the Characteristics of Silicon Nitride Films Prepared by Low-frequency PECVD Technology

A Study of PECVD Amorphous SiO2 Films Using Infrared Absorption Techniques

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Influences of Electron Energy Stateon the Residual Stress of Silicon Nitride Thin Films Deposited by PECVD

Influence of PECVD process on the etching rate of SiNx films

Effect of Gas Pressure on the Optical Properties of n-Type a-Si: H Thin Films Deposited by PECVD

Influence of PECVD Process Parameters on the Etching Rate of SiN X Films

Study of SiNx Thin Film Character with Gas Flow Rate in PECVD

Processing and Characterisation of PECVD Silicon Nitride Films

Effect of working gas pressure on the optical properties of RF-PECVD a-Si:H films

Influences Of Process Parameters Of Low Frequency Pecvd Technology On Intrinsic Stress Of Silicon Nitride Thin Film

Thermal Nitridation Kinetics of Silicon Wafers in Nitrogen Atmosphere During Annealing

Effect of Annealing Temperature on Photoluminescence Performance and Structure of Si-rich Silicon Nitride

Characteristic Study of Silicon Nitride Films Deposited by LPCVD and PECVD

Research on Nitride Membranes Grown by PECVD

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Deposition and Characterization of Ammonia-free PECVD Silicon Nitride

OPTICAL AND ELECTRICAL PROPERTIES OF ANNEALING SiNx: H THIN FILM

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film