Effect of O2/(O2+Ar) Ration on Deposition Rate of La-Sr-Mn-O Thin Films Prepared by Magnetron Sputtering

江少群,马欣新,唐光泽,孙明仁,王刚

DOI: https://doi.org/10.3321/j.issn:1007-9289.2008.02.003

2008-01-01

China surface engineering

Abstract:The La–Sr–Mn–O thin films were deposited on Si(100) substrate by DC magnetron sputtering with different O2/(O2+Ar) ratio. The effect of O2/(O2+Ar) ratio on the deposition rate of the films was studied using SEM (scanning electron microscopy) analysis. The results showed that the film thickness was homogeneous and the O2/(O2+Ar) ratio displayed an important effect on deposition rate. The deposition rate of films grown at higher substrate temperature and sputtering pressure decreased in parabolic relation with the increasing of O2/(O2+Ar) ratio. It decreased 52.8% when O2/(O2+Ar) ratio increased from 4.4% to 45.6%. The deposition rate of films grown at lower substrate temperature and sputtering pressure decreased in exponential relation with the increase of O2/(O2+Ar) ratio. The increase of oxygen content increased the collision probability between oxygen atoms/ions and sputtered atoms/ions, which decreased the kinetic energy of sputtered atoms/ions. Then the number of sputtered atoms/ions arriving at substrate decreased, which resulted in the reduction of deposition rate.