Improving Response Speed of Electrooptical Switch in Silicon-On-Insulator by Modifying Modulation Area Structure

QF Yan,JZ Yu
DOI: https://doi.org/10.1143/jjap.42.4361
IF: 1.5
2003-01-01
Japanese Journal of Applied Physics
Abstract:This paper reports on the simulation of two 2 x 2 electrooptical switches with different modulation area structures in silicon-on-insulator (SOI). A two-dimensional (2D) semiconductor device simulation tool PISCES-II has been used to analyze the dc and transient behaviors of the two devices. The modeling results show that the switch with an N+-I-P+-I-N+ modulation structure has a much faster response speed than the device with a P+-I-N+ modulation structure, although the former requires slightly stronger injection power.
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