Design and Wafer-Level Fabrication of Stacked-Type Transformers for High-Density Power Converters
Changnan Chen,Pichao Pan,Jiebin Gu,Min Liu,Xinxin Li
DOI: https://doi.org/10.1109/tpel.2024.3355243
IF: 5.967
2024-04-01
IEEE Transactions on Power Electronics
Abstract:In response to the emerging demands in the miniaturization and integration of power conversion systems, the stacked-type transformer chips with significantly improved power efficiency for sub-MHz applications are developed in this article. The silicon-embedded high-density multilayer spiral winding structures in the transformer chips are fully metalized using our group developed Zn--Al alloy microelectromechanical system casting technique, which ensures the wafer-level batch fabrication with high consistency. After being assembled with dual E-shape magnetic cores, the fabricated stacked-type transformer chips are measured to demonstrate high inductance integration density of over 1.54Hmm2 and superior coupling coefficient of 0.985 at the targeted operating frequency of 100kHz. Owing to the compact, low-resistance thick-metal structures, Q-factors of 20.5 at 100kHz and transformer efficiency of above 85 in a wide frequency range are obtained from the two-port small signal measurements. Switching mode fly-back dcdc converters are constructed to further validate the power conversion capability of the developed device. Benefiting from the implementation of the stacked-type transformers, the isolated dcdc converters are measured to operate with an overall power efficiency of up to 82.46 at the 7.5 W power output condition, where an ultra-high power density of 17.64Wcm3 is also obtained.
engineering, electrical & electronic