Study on Surface Chemical Polishing of HgInTe Wafers

杨杨,王领航,介万奇,王亚彬,傅莉
DOI: https://doi.org/10.16553/j.cnki.issn1000-985x.2009.02.035
2009-01-01
Abstract:The surface chemical polishing technique of HgInTe(MIT)wafers was investigated. Br2-C3H7ON and Br2-MeOH solutions with the different concentrations were used as the chemical polishing agent. The experimental results show that the wafers in 5% Br2-C3H7ON had a stable erosion rate, which could be easily controlled. The surface scratches were effectively removed and a shiny surface was obtained. Through AFM analysis, it was proved that the surface roughness could be reduced by about 67%. MIT wafers in 5% Br2-MeOH, however,was eroded very fast and had a rougher surface.
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