Abstract:The surface preparation is a prerequisite for ensuring the required properties of a diamond film formed by gas-phase deposition. The influence of the temperature and concentration of the CuSO 4 etchant on the structural and phase compositions of the surface of hard-alloy materials is considered in this work, and the structural and phase compositions of a continuous polycrystalline diamond film at its growth stages is also considered. The adhesion of the diamond films to the surface of hard-alloy materials is determined qualitatively. It is established that the treatment of the hard-alloy surface in the CuSO 4 solution at t = 23°C leads to the inhomogeneous removal of a cobalt binder with chipping WC grains and the formation of the porous structure in the surface layer of the WC–6% Co alloy. The treatment by the CuSO 4 etchant at t = –2°C provides the homogeneous etching of the Co binder over the boundaries of WC grains and the formation of a chemically homogeneous surface. The orientation growth and adhesion of the diamond film depend on the elemental composition of the WC–Co alloy surface after treatment by the CuSO 4 solution. If the treatment was performed at t sln = 23°C, then the removal of copper from the defect surface WC layer is complicated during the synthesis, which provides the multidirectional growth of diamond crystals in the film along two directions, 〈111〉 and 〈110〉, which causes critical biaxial compressive stresses (2.5 GPa) and leads to low film adhesion to the hard alloy surface. If the treatment is performed at t sln = –2°C, then the orientational growth of diamond crystals in the film occurs in one preferential crystallographic direction 〈111〉, which lowers the biaxial compressive stresses (1.7 GPa) and increases the adhesive bond of the film to the hard alloy surface. The structure imperfection calculated from the ratio of the lines of integrated intensities I 1333 / I 1580 using the Raman spectroscopy method decreases with an increase in concentration at negative temperatures and increases at positive temperatures of the CuSO 4 solution during surface preparation.

Surface Free-Energies And Morphologies Of Chemical-Vapor-Deposited Diamond Films

Surface Energies And Morphologies Of Chemical-Vapor-Deposited Diamond Films

A study on surface morphologies of diamond films

A Kinetic Model for the Initial Growth of Diamond Films

Morphologies and structures of chemical vapor deposited diamond films and film-substrate interfaces

Thermodynamic Analyses on (111) and (100) Facets Orientation Growth of CVD Diamond Film

Effect of surface component and morphology of diamond film on surface energy

Characteristics of Diamond Crystals Deposited on Quartz Substrates by Chemical Vapor Deposition

Structure and Wettability Property of the Growth and Nucleation Surfaces of Thermally Treated Freestanding Cvd Diamond Films

Fracture Strength and Toughness of Chemical-Vapor-deposited Polycrystalline Diamond Films

Field Emission Characteristics of Diamond Films with Different Surface Morphologies

Growth of well-adhered and smooth diamond thin films on fused silica substrates

A Chemical Adsorption Growth Model For Hot Filament Chemical Vapor Deposition Diamond

Probable Optimum Hydrogen Coverage of Chemical Vapor Deposited Diamond (111) Surface

Wettability and Surface Energy of Hydrogen- and Oxygen-Terminated Diamond Films

Thermodynamics Analyses of the Effect of CH 3 and C 2 H 2 on Morphology of CVD Diamond Films

Chemical Vapor Deposition of <110> Textured Diamond Film through Pre-Seeding by Diamond Nano-Sheets

Kinetic Model For Diamond Nucleation Upon Chemical Vapor Deposition

Morphologic Study of (100) Single-Crystal Diamond Films Epitaxially Grown by Chemical-Vapor-Deposition

Growth Features of Diamond Films on the Tungsten Carbide Surface with a Copper Sublayer

Metallographic study on the cross-sectional morphology of diamond film-substrate