Transmission Electron Microscopy and High-Resolution Electron Microscopy Study of YNi<sub>2</sub>B<sub>2</sub>C Thin Film on Y<sub>2</sub>O<sub>3</sub>-Buffered MgO

G. H. Cao,P. Simon,U. Krämer,S. C. Wimbush,bernhard holzapfel
DOI: https://doi.org/10.1021/cm031044k
IF: 10.508
2004-01-01
Chemistry of Materials
Abstract:An YNi2B2C thin film deposited on an Y2O3-buffered (001) MgO substrate by pulsed laser deposition has been investigated by X-ray diffraction, transmission electron microscopy (TEM), and high-resolution electron microscopy. Cross-sectional TEM analyses show that the YNi2B2C film grows in the [001] direction while the Y2O3 buffer layer exhibits columnar growth in the [001] and [111] directions on the (001) MgO substrate, with the growth in the [001] direction being preferred. The orientation relationships of the YNi2B2C film, Y2O3 buffer layer, and MgO substrate were obtained. The primary orientation relationship YNi2B2C(001)[110] \\ Y2O3(001)[100] \\ MgO(001)[100], evident from X-ray analyses, was able to be confirmed in the TEM study. A hexagonal impurity phase Y0.915Ni4.12B with lattice parameters alpha = 1.491 nin and c = 0.692 nm was identified at the interface between the Y2O3 buffer layer and the YNi2B2C thin film.
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