Numerical Simulation of Charge Collection Characteristics of Si SOI Microdosimeter

TANG Du,LIU Shu-huan,LI Yong-hong,HE Chao-hui
2012-01-01
Abstract:2D simulation of the main influence factors on the charge collection characteristics of Silicon On Insulator(SOI) PIN microdosimeter was performed with TCAD software.The transient current in the microdosimeter induced by 3 MeV alpha particle was calculated at different applied voltages(from 10 V to 50 V),doping concentrations and alpha incident directions.The simulation results show that the transient current increases with the increase of reverse bias voltage due to the decrease of the carrier recombination effect;and the space charges induced by alpha particle are almost collected in 1 ns with 10 V applied to the n+ region at the charge collection efficiency nearly 100%;and the transient current decrease when the doping concentration of each region increases.
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