Abstract:Ultrafast thermomechanical responses of silicon thin films due to ultrashort-pulsed laser irradiation were investigated using an atomic-level hybrid method coupling the molecular dynamics and the ultrafast two-step energy transport model. The dynamic reflectivity and absorption were considered, and the effects of laser fluence and pulse duration on the thermomechanical response were studied. It was found that both the carrier temperature and number density rapidly increase to their maximum while the lattice temperature rises at a much slower rate. The ultrafast laser heating could induce a strong stress wave in the film, with the maximum compressive and tensile stress occurring near the front and back surfaces, respectively. For laser pulses of the same duration, the higher the laser fluence is, the higher the carrier temperature and density and lattice temperature are induced. For the same laser fluence, a longer pulse generally produces lower carrier density and temperatures and weaker stress shock strength. However, for the fluence of 0.2 J/cm(2), the lowest lattice temperature was simulated for a 100-fs pulse compared to the 1-ps and 5-ps pulses, due to the increase of reflectivity by high carrier density. It is also shown that the optical properties as functions of lattice temperature usually employed are not suited for modeling ultrafast laser interactions with silicon materials.

Numerical simulation of thermal and stress field in silicon-based positive-intrinsic-negative photodiode irradiated by millisecond-pulsed laser

Numerical Simulation Of Millisecond Laser-Induced Damage In Silicon-Based Positive-Intrinsic-Negative Photodiode

Laser-induced Damage in a Silicon-Based Photodiode by MHz Picosecond Laser

Structural, Optical and Electrical Behavior of Millisecond Pulse Laser Damaged Silicon-Based Positive-Intrinsic-Negative Photodiode

Anisotropic Study of Thermal Stresses of (110) Silicon Induced by Millisecond Laser

Experimental study of millisecond pulse laser ablation biased silicon-based PIN photodiodes

Numerical and experimental study of the thermal stress of silicon induced by a millisecond laser.

Numerical simulation of the accumulative photo-thermal effect in silicon under illumination with sequential laser pulses

Numerical Simulation of Thermal Damage Process Between Laser and A Photodiode for Different Magnitudes of Pulse Energy

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Photoelectric Performance Degradation of Millisecond Laser-Irradiated Silicon Photodiodes

Thermal Shock of Silicon-Based Materials under Multi-Pulsed Intense Laser Radiation

Research of temperature field and thermal stress field of CCD under laser irradiation

Numerical simulation and validation of subsurface modification and crack formation induced by nanosecond-pulsed laser processing in monocrystalline silicon

Thermal and mechanical damage in CCD detector induced by 1.06μm laser

Numerical Simulation of Pulsed Laser Induced Damage on CCD Arrays

Mechanisms for the millisecond laser-induced functional damage to silicon charge-coupled imaging sensors

Studies on the thermal damage mechanisms of a PIN junction optoelectronic diode by laser

Time-resolved Temperature Measurement and Numerical Simulation of Millisecond Laser Irradiated Silicon

Numerical Simulation of Vaporization Effect of Long Pulsed Laser Interaction with Silicon

Numerical Simulation and Experimental Investigation of ps Pulsed Laser Modification inside 4H-SiC Material