Abstract:Modern semiconductor applications demand precise laser processing at the nanometer scale, requiring a detailed understanding of phase transitions and structural modifications. Accurate control over laser-induced processes in semiconductors is essential for generating surface structures and modifying surface properties. In this study, we present a numerical investigation of non-equilibrium laser-induced phase transitions in silicon (Si) using a hybrid atomistic-continuum model. The model combines the strengths of Molecular Dynamics (MD) simulations for atomisticscale descriptions of non-equilibrium phase transitions with a continuum approach to account for laser-generated free carriers. This framework captures the generation and diffusion of electronhole pairs, thermal diffusion, and electron-phonon coupling during laser energy deposition. We apply the model to determine the melting depth as a function of fluence for a 100 fs laser pulse at 800 nm. The results show that the stand-alone continuum approach underestimates the melting threshold compared to the hybrid atomistic-continuum model, which incorporates the detailed kinetics of melting. Additionally, we explore the effect of crystal orientation on melting dynamics. Lastly, the MD model is used to identify the conditions leading to the amorphization of the Si surface. These findings provide valuable insights into experimental observations of Si surface structuring induced by ultrashort laser pulses.

Numerical Simulation Of Millisecond Laser-Induced Damage In Silicon-Based Positive-Intrinsic-Negative Photodiode

Laser-induced Damage in a Silicon-Based Photodiode by MHz Picosecond Laser

Experimental study of millisecond pulse laser ablation biased silicon-based PIN photodiodes

Modeling of a Diode Side Pumped Cesium Vapor Laser MOPA System

Combined Continuum-Atomistic Modeling of Ultrashort-Pulsed Laser Irradiation of Silicon

Thermal Damage of Monocrystalline Silicon Irradiated by Long Pulse Laser

Three-temperature modeling of laser-induced damage process in silicon

Calculation of Laser Irradiation Effect and Analysis of Laser-Induced Damage Threshold in Semiconductor

Study on the Inversion of Doped Concentration Induced by Millisecond Pulsed Laser Irradiation Silicon-Based Avalanche Photodiode.

Atomic-Level Modeling of A Silicon Nanofilm Irradiated by Ultrashort-Pulsed Laser Bursts

Numerical simulation and validation of subsurface modification and crack formation induced by nanosecond-pulsed laser processing in monocrystalline silicon

Experimental study of the damage morphology induced by the millisecond–nanosecond combined-pulse laser with different pulse delay on silicon

Modeling the Electrical Degradation of Micro-transfer-Printed 845 nm VCSILs for Silicon Photonics

Numerical Simulation of Pulsed Laser Induced Damage on CCD Arrays

Investigation Of Nonlinear Absorption And Laser Damage On Lithium-Niobate Single-Crystals

Numerical Simulation and Experimental Investigation of ps Pulsed Laser Modification inside 4H-SiC Material

Numerical Simulation and Experimental Study of Temperature Evolution of Si-APD Irradiated by Long-Pulse Laser

Wavelength dependence of laser-induced excitation dynamics in silicon

Dynamic behavior modeling of laser-induced damage initiated by surface defects on KDP crystals under nanosecond laser irradiation

A numerical model for semiconductor laser diodes

Numerical Investigation of the Kinetics of Non-Equilibrium Phase Transitions in Silicon Induced by an Ultra-Short Laser Pulse