Efficient light emitting diodes with Teflon buffer layer

Yong Qiu,Yudi Gao,Liduo Wang,Deqiang Zhang
DOI: https://doi.org/10.1016/S0379-6779(02)00121-2
IF: 4
2002-01-01
Synthetic Metals
Abstract:The polytetrafluoroethylene (Teflon) was utilized as buffer layer to improve the performance of organic light emitting diodes (OLEDs). In the ITO/Teflon/N,N′-diphenyl-N,N′-(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD)/tris(8-hydroxy-quinoline) aluminum (Alq3)/Ca/Ag device, the Teflon film helped to enhance the hole tunneling injection and effectively impede indium diffusion from the ITO electrode. Compared with the devices without Teflon, the turn-on voltage was lowered by 1.5V due to the introduction of Teflon buffer, and the optimized devices exhibited a luminous efficiency double that of the devices without Teflon layer, and the device lifetime proved to be dramatically increased.
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