Abstract:Conventional computing paradigm struggles to fulfill the rapidly growing demands from emerging applications, especially those for machine intelligence, because much of the power and energy is consumed by constant data transfers between logic and memory modules. A new paradigm, called "computational random-access memory (CRAM)" has emerged to address this fundamental limitation. CRAM performs logic operations directly using the memory cells themselves, without having the data ever leave the memory. The energy and performance benefits of CRAM for both conventional and emerging applications have been well established by prior numerical studies. However, there lacks an experimental demonstration and study of CRAM to evaluate its computation accuracy, which is a realistic and application-critical metrics for its technological feasibility and competitiveness. In this work, a CRAM array based on magnetic tunnel junctions (MTJs) is experimentally demonstrated. First, basic memory operations as well as 2-, 3-, and 5-input logic operations are studied. Then, a 1-bit full adder with two different designs is demonstrated. Based on the experimental results, a suite of modeling has been developed to characterize the accuracy of CRAM computation. Scalar addition, multiplication, and matrix multiplication, which are essential building blocks for many conventional and machine intelligence applications, are evaluated and show promising accuracy performance. With the confirmation of MTJ-based CRAM's accuracy, there is a strong case that this technology will have a significant impact on power- and energy-demanding applications of machine intelligence.

Magnetic Adder Based on Racetrack Memory

A Low Power and High Sensing Margin Non-Volatile Full Adder Using Racetrack Memory

Magnetic Domain-Wall Racetrack Memory-Based Nonvolatile Logic for Low-Power Computing and Fast Run-Time-Reconfiguration.

Magnetic Full Adder Based on Negative Differential Resistance-Enhanced Anomalous Hall Effect

Nonvolatile magnetic half adder combined with memory writing

A spintronics full adder for magnetic CPU

Parallel-Prefix Adder in Spin-Orbit Torque Magnetic RAM for High Bit-Width Non-Volatile Computation

Proposal of Analog In-Memory Computing with Magnified Tunnel Magnetoresistance Ratio and Universal STT-MRAM Cell

Domain Wall-Magnetic Tunnel Junction Spin Orbit Torque Devices and Circuits for In-Memory Computing

Domain Wall-Magnetic Tunnel Junction Analog Content Addressable Memory Using Current and Projected Data

The Write Deduplication Mechanism Based On A Novel Low-Power Data Latched Sense Amplifier For A Magnetic Tunnel Junction Based Non-Volatile Memory

Experimental demonstration of magnetic tunnel junction-based computational random-access memory

Magnetic Logic Based on Diode-Assisted Magnetoresistance

Pj-AxMTJ: Process-in-memory with Joint Magnetization Switching for Approximate Computing in Magnetic Tunnel Junction

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM

Reconfigurable spintronic logic gate utilizing precessional magnetization switching

High Speed, Low Resource and Non-volatile MTJ-CMOS Hybrid Logical Circuits

Ultralow power and shifting-discretized magnetic racetrack memory device driven by chirality switching and spin current

Predictive Materials Design of Magnetic Random-Access Memory Based on Nanoscale Atomic Structure and Element Distribution

Area-Aware Optimization of MRAM Crossbar Array Bit-Cell for In-Memory Computing