Abstract:High-speed and low-power area-efficient memory solutions are in high demand in today’s smart and internet environment. To program and store data and its associated information, it has grown as a fantastic concept to replace charge in semiconductor devices with electron spin. By further eliminating power dissipation, this leads to the development of “green electronics,” a field of technology that is both energy and chip space efficient. A sort of spintronic device created for potential energy-efficient applications is the magnetic tunnel junction (MTJ) device controlled by spin orbit torques (SOTs). A three-terminal MTJ device with perpendicular to the plane magnetization may operate more quickly and efficiently thanks to the available spin orbit torques (PMTJ). The design of a novel modified non-volatile master slave flip flop (NVMSFF) for register memory array architectures is presented in this study. It is low-power, high-speed, and area-efficient. The NVMSFF design uses a hybrid approach that combines CMOS 45 nm technology with a Verilog-A Model-based SOT-PMTJ circuit that uses spintronics. Additionally, the planned NVMSFF and current NVSFF were used in the design of the 4 × 4 and 8 × 8 memory arrays. The suggested updated NVMSFF was shown to have a lower latency, use less space, and dissipate less power. Additionally, it was discovered that Designed Memory arrays were space and energy efficient.

A Non-Volatile Flip-Flop in Magnetic FPGA Chip

High-Performance Current-Mode Logic Ternary D Flip-Flop Based on Bipolar Complementary Metal Oxide Semiconductor

A Low-Power Low-VDD Nonvolatile Latch Using Spin Transfer Torque MRAM

Design of high-speed, low-power non-volatile master slave flip flop (NVMSFF) for memory registers designs

Low-power and area-efficient memristor based non-volatile D latch and flip-flop: Design and analysis

High Speed, Low Resource and Non-volatile MTJ-CMOS Hybrid Logical Circuits

STT-MRAM Based Low Power Synchronous Non-Volatile Logic with Timing Demultiplexing

Magnetic Domain-Wall Racetrack Memory-Based Nonvolatile Logic for Low-Power Computing and Fast Run-Time-Reconfiguration.

Low Power Computing Using STT-MRAM

The Write Deduplication Mechanism Based On A Novel Low-Power Data Latched Sense Amplifier For A Magnetic Tunnel Junction Based Non-Volatile Memory

Ultrafast and Ultralow‐Power Voltage‐Dominated Magnetic Logic

A ReRAM-Based Nonvolatile Flip-Flop With Self-Write-Termination Scheme for Frequent-OFF Fast-Wake-Up Nonvolatile Processors.

Simulation of the RRAM-based flip-flops with data retention

Design of a Fast and Low-Power Sense Amplifier and Writing Circuit for High-Speed MRAM

Advancing Nonvolatile Computing with Nonvolatile NCFET Latches and Flip-Flops.

Nonvolatile Static Random Access Memory (NV-SRAM) Using Magnetic Tunnel Junctions with Current-Induced Magnetization Switching Architecture

Enabling Normally-Off In Situ Computing With a Magneto-Electric FET-Based SRAM Design

Speed Enhancement of Magnetic Logic-Memory Device by Insulator-to-metal Transition

Nonvolatile SRAM architecture using MOSFET-based spin-transistors

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Enabling Normally-off In-Situ Computing with a Magneto-Electric FET-based SRAM Design