Abstract:Photoluminescence from β-SiC nanocrystals embedded in SiO2 films at room temperature has been studied. The β-SiC nanocrystals were formed by carbon implantation into Si substrate at 35 keV with various dose, followed by post-implantation annealing at 1200 °C for 30 min in Ar ambient. Thermal dry-oxidation of the annealed samples at 1050 °C for 3 h was performed to form β-SiC nanocrystals embedded in SiO2 films. The composition and chemical state of C and Si atoms were characterized by non-Rutherford backscattering spectrometry and Fourier transform infrared spectroscopy, respectively. FTIR results show that β-SiC nanocrystals were formed in SiO2 films, and the amount of β-SiC nanocrystals in SiO2 films increases with increasing of implanted dose. The photoluminescent properties of the samples were measured at room temperature with a Hitachi F4010 fluorescence spectrophotometer using a xenon lamp as an excitation source (300 nm). Two distinguishable PL bands located at around 460 and 535 nm were observed in all the samples. The PL intensity significantly depends the implanted dose, and there is a critical implanted dose of 2×1017 cm−2, at which the PL intensity reaches the largest value.

Photoluminescence in SiCGe Thin Films Grown on 6H-Sic

Visible Room-Temperature Photoluminescence of Ge-doped SiO2 Glasses Fabricated by a Sol–gel Process

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Hetero-epitaxial defects and optical characteristics of SiCGe layers grown on 6H-SiC substrate

Ultraviolet-Light-Enhanced Luminescence in Sic Thin Films Grown on Si by Hot Filament Chemical Vapor Deposition and Ultraviolet-Light-Induced Luminescence in Anodized Sic

Defect-related Infrared Photoluminescence in Ge+-implanted SiO2 Films

Photoluminescence from Porous-Like Sic and Its Light-Induced Enhancement

Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt

Research on Photoluminescence and Electroluminescence of Si-Rich SiN Films

Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters

Fabrication and Luminescent Properties of 6H-SiC/3C-SiC/6H-SiC Quantum Well Structure

Photoluminescence Characterization of Beryllium-Implanted 6h–silicon Carbide

Novel Room Temperature Photoluminescence of Ge/Si Islands in Multilayer Structure Grown on Silicon-On-Insulator Substrate

Origin of Photoluminescence Peaks in Ge–SiO2 Thin Films

Photoluminescence from C+-Implanted Sinxoy Films Grown on Crystalline Silicon

Photoluminescence of Amorphous Si Films Prepared by AtmosphericPressure Chemical Vapor Deposition

Photoluminescence from Β-Sic Nanocrystals Embedded in SiO2 Films Prepared by Ion Implantation

On the Origin of Strong Visible Photoluminescence in a Ge / Porous Si Structure

Orange-Green Emission from Porous Si Coated with Ge Films: the Role of Ge-Related Defects

Luminescence from Si/SiO 2 with Si Implantation

Intense Short-Wavelength Photoluminescence from Thermal Sio2 Films Co-Implanted with Si and C Ions