Abstract:Ternary PbTiOx films were deposited at 240°C on Pt-covered Si substrates using a combination of liquid injection atomic layer depositions of binary TiOx and PbO films. Ti(OC3H7)2(C11H19O2)2 [Ti(Oi−Pr)2(DPM)2] and Pb(C11H19O2)2 [Pb(DPM)2] dissolved in ethylcyclohexane and H2O were used as source materials. The deposition rates of Pb and Ti were enhanced in the ternary process compared to their binary processes under comparable deposition conditions. The Pb∕Ti ratio of PbTiOx films saturated with an increase in Ti precursor input, while it continued to increase with an increasing Pb precursor input. The self-regulated growth nature of the Pb–O layer in the binary film growth was lost in the mixed PbTiOx process as a result of interaction with the predeposited Ti–O layer. It was confirmed that for the PbTiOx film to grow on Pt substrates, an initial incubation period is required. Both Pb–O and Ti–O layers shared a common incubation period of up to ten sequences. The incubation period was shortened by increasing the input of Pb precursor. It was independent of the input of the Ti precursor and the order of precursor supply. This variable incubation period was considered as a potential key issue for growing stoichiometric and uniform multicomponent films over three-dimensional (3D) structures. The order of precursor supply affected the effective deposition rate after the incubation period. A sequence starting with a Ti precursor injection showed a higher growth rate than a sequence that started with a Pb precursor supply. A PbTiOx film was deposited on a 3D substrate precoated with an Ir layer to demonstrate the uniformity in film thickness and cation composition. Although the present PbTiOx process does not have an ideal wide-process window in the cation composition, the PbTiOx film showed uniform coverage and the distribution of cation composition over the hole structure was within ±10%.

Preparation of Thicker Pbtio3 Thin Film by A Metallo- Organic Solution Deposition Process

Low Temperature Crystallization and Thick Single Layer of Pbtio3 Thin Film by Metallo-Organic Compound Decomposition with an Additive of Pvac

Single-Crystalline, Single-Domain Epitaxy of Pbtio3 Thin-Films by Metalorganic Chemical-Vapor-Deposition

Preparation Of Epitaxial Pbtio3 Thin-Films By Metalorganic Vapor-Phase Epitaxy Under Reduced Pressure

Fabrication of organic PVP doping-based Ba 0.5Sr 0.5TiO 3 thick films on silicon substrates for MEMS applications

Preparation of Nano-Structured BaTiO3 Thin Film by Electrophoretic Deposition and Its Characterization

Formation of Pb0.6sr0.4(Ti0.97mg0.03)O-2.97 Thin Films on Assembled Bottom Electrodes with Titanium Silicide Nanowires

Preparation of PbTiO3 thin films by a modified Sol-Gel processing

Growth of Ternary PbTiOx Films in a Combination of Binary Oxide Atomic Layer Depositions

Preparation and Optical Waveguide Property of Metal Alkoxide Solution-Derived Pb(Zr0.5ti0.5)O-3 Thick Films

Preparation of A Monodispersed Suspension of Barium Titanate Nanoparticles and Electrophoretic Deposition of Thin Films

Effect of Poly(Vinyl Acetate) on Structures and Properties of Pbzr0.52ti0.48o3 Thick Films

Chemical Solution Deposition And Electrical Properties Of (100)-Predominant Batio3 Thicker Films

Effect of UV-Irradiation on Processing of Lead Titanate Thin Film Derived from Photoreactive [Pb-Ti] Precursor Modified with Alkanolamine.

Liquid Injection Ald of Pb(Zr,Ti)O-X Thin Films by A Combination of Self-Regulating Component Oxide Processes

Structures and Properties of Pb(Zr,Ti)O3thin Films by Metallo-Organic Compound Decomposition Process

Pb(Zr,Ti)O-3 Thin Films Prepared on Pbtio3/Si(100) by Chemical Solution Decomposition Technique

Preparation and Characterization of Lithium-Ion-Conductive Li1.3al0.3ti1.7(Po4)(3) Thin Films by the Solution Deposition

(Ba,sr)tio3 Thin Film Growth in A Batch Processing Mocvd Reactor

Pbtio3 Thin-Films Prepared By Metalorganic Chemical-Vapor-Deposition On Laalo3

High throughput physical vapor deposition growth of Pb(ZrxTi1-x)O3 perovskite thin films growth on silicon substrates.