Abstract:The formation of a denuded zone (DZ) by conventional furnace annealing (CFA) and rapid thermal annealing (RTA) based denudation processing is investigated and the gettering of copper (Cu) atoms in germanium co-doped heavily phosphorus-doped Czochralski (GHPCZ) silicon wafers is evaluated. It is suggested that both a good quality defect-free DZ with a suitable width in the sub-surface area and a high density bulk micro-defect (BMD) region could be formed in heavily phosphorus-doped Czochralski (HPCZ) silicon and GHPCZ silicon wafers. This is ascribed to the formation of phosphorus-vacancy (P-V) related complexes and germanium-vacancy (GeV) related complexes. Compared with HPCZ silicon, the DZ width is wider in the GHPCZ silicon sample with CFA-based denudation processing but narrower in the one with two-step RTA pretreatments. These phenomena are ascribed to the enhancing effect of germanium on oxygen out-diffusion movement and oxygen precipitate nucleation, respectively. Furthermore, fairly clean DZs near the surface remain in both the HPCZ and GHPCZ silicon wafers after Cu in-diffusion, except for the HPCZ silicon wafer which underwent denudation processing with a CFA pretreatment, suggesting that germanium doping could improve the gettering of Cu contamination.

Investigation of Copper Precipitation in Denuded Zone in Czochralski Silicon

Influence of Nickel Precipitation on the Formation of Denuded Zone in Czochralski Silicon

Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

Influence of Copper Precipitation on Oxygen Precipitation in Czochralski Silicon

Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

Internal Gettering of Copper Contamination in Czochralski Silicon

Copper Precipitation in Nitrogen-Doped Czochralski Silicon

Transmission Electron Microscopy Investigation of the Micro-Defects in Czochralski Silicon

Oxygen Precipitation of Nitrogen-Doped Czochralski Silicon Subjected to Multi-Step Thermal Process

Correlation Between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

Copper Precipitation in Germanium-Doped Czochralski Silicon

Effect of Rapid Thermal Processing on Oxygen Precipitation in Czochralski Silicon Subjected to Simulating CMOS Thermal Processing

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Effect of Annealing Atmosphere on Oxygen Precipitation and Formation of Denuded Zone in Czochralski Silicon Wafer

Denuded Zone Formation in Germanium Codoped Heavily Phosphorus-Doped Czochralski Silicon

Oxygen Precipitation in Czochralski Silicon: Effect of Ramped Anneal from 300To750°c

Enhanced Oxygen Diffusion in Czochralski Silicon at 450–650 °C

Oxygen Precipitation Within Denuded Zone Founded by Rapid Thermal Processing in Czochralski Silicon Wafers

Effect of Ramping from Low Temperatures on Oxygen Precipitation in Czochralski Silicon

Formation of A Denuded Zone in Nitrogen-Doped Czochralski Silicon Wafer Treated by Ramping Anneals

Denuded Zone in Czochralski Silicon Wafer with High Carbon Content