Copper Precipitation in Germanium-Doped Czochralski Silicon

Weiyan Wang,Deren Yang,Xiangyang Ma,Yuheng Zeng,Duanlin Que

DOI: https://doi.org/10.1149/ma2008-02/26/1999

2008-01-01

ECS Meeting Abstracts

Abstract:Abstract not Available.

What problem does this paper attempt to address?

Copper Precipitation in Nitrogen-Doped Czochralski Silicon

Weiyan Wang,Deren Yang,Xiangyang Ma,Duanlin Que

DOI: https://doi.org/10.1063/1.2949402

IF: 2.877

2008-01-01

Journal of Applied Physics

Abstract:Copper (Cu) precipitation behaviors in p-type conventional Czochralski (CZ) and nitrogen-doped Czochralski (NCZ) silicon have been comparatively investigated by means of transmission electron microscopy and optical microscopy. Within the CZ silicon, the Cu precipitates exhibited as spheres with size of about 100 nm and generated stress in the matrix. In this case, they were preferentially delineated as etching pits. On the other hand, within the NCZ silicon, the Cu precipitates were revealed as colonies in which spherelike Cu precipitates with sizes of 10–30 nm assembled on and around the climbing dislocations. As a result, they were preferentially etched as aggregated rods. The formation of Cu precipitate colonies in NCZ silicon was explained in terms of the effect of large grown-in oxygen precipitates on Cu precipitation.
Germanium in Czochralski Silicon

De Ren Yang,Jiahe Chen

DOI: https://doi.org/10.4028/www.scientific.net/ddf.242-244.169

2005-01-01

Defect and Diffusion Forum

Abstract:The behaviors of isovalent impurities doped in Czochralski (CZ) silicon crystal have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about germanium in CZ silicon is presented. The disturbance of silicon crystal lattice in and the influence on the mechanical strength due to germanium doping is described. Oxygen related donors, oxygen precipitation and voids defects in germanium doped Czochralski (GCZ) silicon has been demonstrated in detail. In addition, the denuded zone formation and the internal gettering technology of GCZ silicon is also discussed.
High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Jiahe Chen,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1016/j.tsf.2009.09.129

IF: 2.1

2010-01-01

Thin Solid Films

Abstract:Czochralski silicon (Cz-Si) doped with germanium (Ge) has recently drawn the attentions on the next generation of Cz-Si materials used for ultra large-scale integrated circuits. Oxygen precipitate, which is the most important micro-defect in Ge-doped Cz-Si (GCz-Si), domains the majority properties of bulk silicon. In this presentation, the behaviors of oxygen precipitation in GCz-Si at high temperatures have been studied. It was found that, compared with conventional Cz-Si, the higher-density but smaller-sized oxygen precipitates were formed in GCz-Si at extremely high temperature, which could be ascribed to the enhanced nucleation of oxygen precipitates by the Ge-doping. Meanwhile, compound morphologies of oxygen precipitates consisted of plate-like and polyhedral shapes were found in GCz-Si, which can probably be ascribed to the different levels of vacancy coalesced by the so-called Ge-related complexes in GCz-Si.
Germanium Effect on Oxygen Precipitation in Czochralski Silicon

H Li,DR Yang,XY Ma,XG Yu,DL Que

DOI: https://doi.org/10.1063/1.1790578

IF: 2.877

2004-01-01

Journal of Applied Physics

Abstract:The oxygen precipitation in germanium-doped Czochralski (GCZ) silicon has been investigated. After a prolonged annealing at 800 and 1000°C, it was found that the Ge-doping enhanced the formation of oxygen precipitates with a higher density and modified their morphology and size. Furthermore, the existing oxygen precipitates in the GCZ silicon were readily dissolved, because the Ge-doping facilitated the formation of smaller oxygen precipitates. Based on the facts, the mechanism for the enhancement effect of Ge-doping on oxygen precipitation has been preliminarily discussed.
Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

ZQ Xi,DR Yang,HJ Moeller

DOI: https://doi.org/10.1016/j.infrared.2005.02.029

IF: 2.997

2006-01-01

Infrared Physics & Technology

Abstract:The behavior of copper precipitation in cast multicrystalline silicon (mc-Si) annealed at different temperatures under air cooling (30K/s) or slow cooling (0.3K/s) was investigated by scanning infrared microscopy (SIRM). Comparing to Czochralski-grown silicon (Cz-Si), copper precipitated more easily in mc-Si, and the lowest temperature of copper precipitation in mc-Si was about 700°C, lower than that in Cz-Si. It was also observed that copper preferably precipitated on grain boundaries so that near the grain boundaries the denuded zone formed. The results indicate that the defects including dislocations, grain boundaries and microdefects, as the heteronucleation sites, enhanced copper precipitation. Moreover, cooling rates had a great influence on the copper precipitation, especially at lower annealing temperatures. Generally air cooling led to the formation of high density of copper-precipitate colonies.
Enhancement Effect of Germanium on Oxygen Precipitation in Czochralski Silicon

JH Chen,DR Yang,H Li,XY Ma,DL Que

DOI: https://doi.org/10.1063/1.2188130

IF: 2.877

2006-01-01

Journal of Applied Physics

Abstract:Oxygen precipitation in germanium (Ge)-doped Czochralski (CZ) silicon has been investigated through a series of isothermal anneals at temperatures ranging from 550to950°C. It is found that the nucleation of oxygen precipitates can be enhanced in a wide temperature range and the onset temperature for precipitate nucleation can be increased by the germanium doping. Furthermore, it is also revealed that the oxygen precipitates with a higher density and smaller sizes can be formed in germanium-doped CZ silicon in comparison with those in conventional CZ silicon. These two phenomena are ascribed to the reduction in the critical radius for oxygen precipitation and the increase in the concentration of heterogeneous nuclei due to the germanium doping.
Germanium-doped Czochralski silicon: Oxygen precipitates and their annealing behavior

Jiahe Chen,Deren Yang,Hong Li,Xiangyang Ma,Duanlin Que

DOI: https://doi.org/10.1016/j.mssp.2006.08.009

IF: 4.1

2006-01-01

Materials Science in Semiconductor Processing

Abstract:Czochralski silicon (Cz Si) crystals with germanium (Ge) doping are considered to be of potential application for integrated devices. In this presentation, the influence of Ge doping of Cz Si crystals on oxygen precipitate thermal stability has been discussed. Compared with the conventional Cz Si, oxygen precipitates in Ge-doped Cz (GCz) Si was proposed to be poorer stable thermally during high temperature anneals, which is ascribed to the formation of smaller precipitates. Meanwhile, the oxygen precipitation was promoted in GCz Si wafers that received a high temperature pre-anneal treatment, which has been considered to be associated with the assumption of Ge-related complexes by the intended Ge doping.
Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Zhen Li,Johannes Will,Deren Yang

DOI: https://doi.org/10.1063/5.0027232

IF: 1.697

2020-01-01

AIP Advances

Abstract:In this study, we compare the real-time oxygen (O) precipitation kinetics of heavily germanium (Ge)-doped Czochralski-silicon (Cz-Si) at 900 °C—under different pre-annealing conditions—with those of undoped Cz-Si. We follow in situ the evolution of the Bragg intensity in Laue transmission geometry at elevated temperature and identify both diffusion-driven growth and Ostwald ripening of the O precipitates. We build on our past results, where we observed that although Ge-doping at 800 °C facilitates grown-in precipitates, it has no influence on the nucleation rate. Our present results indicate that within a diffusion-driven growth model, Ge-doping influences the nucleation rate at 650 °C and has no impact at 450 °C. These results shed further light on the origin of various thermal historical effects in Cz-Si samples with high levels of Ge doping.
Influence of Copper Precipitation on Oxygen Precipitation in Czochralski Silicon

ZQ Xi,DR Yang,J Chen,J Xu,YJ Ji,DL Que,HJ Moeller

DOI: https://doi.org/10.1088/0268-1242/19/3/002

IF: 2.877

2012-01-01

Journal of Applied Physics

Abstract:The influence of oxygen precipitation on copper precipitation in Czochralski silicon was investigated by means of defect etching, optical microscopy, and Fourier transform infrared spectrometer. It was found that the density, distribution, and morphology of copper precipitation can be influenced by oxygen precipitate sequence significantly. The spherelike copper precipitates uniformly distributed along the whole cross section were generated only in the specimens oxygen precipitation at the very beginning of the heating treatment. While in the specimens, copper precipitation firstly, the large star-like precipitate colonies was generated due to the repeated nucleation mechanism. Additionally, the bulk microdefects (BMDs) density of the latter was higher than the former. The influence of oxygen precipitation nuclei, which was formed during 750 °C for 8 h annealing, on copper precipitation was similar to that of oxygen precipitation, indicated that the initial density and distribution of oxygen precipitation nuclei were the main factors to decided copper precipitation.
Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Jian Zhao,Peng Dong,Jianjiang Zhao,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1016/j.spmi.2016.05.036

IF: 3.22

2016-01-01

Superlattices and Microstructures

Abstract:We have investigated the impact of germanium (Ge) co-doping on oxygen precipitation (OP) in heavily boron (B)-doped Czochralski (CZ) silicon subjected to low-high two-step anneal without or with the prior high temperature rapid thermal process (RTP). Herein, the Ge concentration is one order of magnitude higher than the B concentration. It is found that the Ge co-doping exhibits the effect of suppression or enhancement on OP in the heavily B-doped CZ silicon without or with the prior RTP. In the case without the prior RTP, the compressive stress introduced by the Ge co-doping compensates the tensile stress arising from the B-doping, which is not beneficial for the growth of oxide precipitates. While, in the case with the prior RTP, the Ge co-doping increases the amount of vacancies introduced by the RTP and, moreover, may enable to generate more heterogeneous nucleation centers of oxide precipitates, thus leading to the enhanced OP in the heavily B-doped CZ silicon.
Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Zhen Li,Johannes Will,Peng Dong,Deren Yang

DOI: https://doi.org/10.1016/j.jcrysgro.2017.09.023

IF: 1.8

2017-01-01

Journal of Crystal Growth

Abstract:The oxygen (O) precipitate growth kinetics from moderate and high germanium (Ge) doped Czochralski-growth silicon (Cz-Si) are in-situ investigated at 1000°C utilizing high-energy X-ray diffraction and analyzed with respect to precipitate density within a diffusion-driven growth model. Distinct different precipitation kinetics are observed for high Ge doped specimens. From the comparison of three thermal treatments, it was found that even for a high Ge concentration the nucleation rate at 800°C is not influenced, however it facilitates larger grown-in precipitates of smaller amount as compared to the precipitates in undoped and moderately Ge doped samples. However, those grown-in O precipitates can be erased either by a direct annealing at 1200°C or 1000°C, but on the other hand stabilized by an annealing step at 800°C, which in this manner asa drift step of grown-in precipitates for the high Ge-doped samples. In comparison additional nuclei are formed at 800°C in the moderate and undoped cases.
Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

J. Vanhellemont,J. Chen,W. Xu,D. Yang,J. M. Rafi,H. Ohyama,E. Simoen

DOI: https://doi.org/10.1149/1.3360748

2010-01-01

ECS Transactions

Abstract:During the last decade the 300 mm Si wafer has been optimized and one is already studying 450 mm crystals and wafers. The increasing silicon crystal diameter shows two important trends with respect to substrate characteristics: the interstitial oxygen concentration is decreasing while the size of grown in voids (COP's) in vacancy-rich crystals is increasing.The first effect is due the suppression of melt movements by the use of magnetic fields leading to a more limited transport of oxygen to the crystal. This and the decreasing thermal budget of advanced device processing leads to reduced internal gettering capacity. The increasing COP size is due to the combination of decreasing pulling rate and thermal gradient leading to a decreased void nucleation and increased thermal budget for void growth. The effect of Ge doping in the range between 10(16) cm(-3) and 10(19) cm(-3) on both COP's and oxygen precipitation will be discussed.
Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

Jiahe Chen,Deren Yang,Hong Li,Xiangyang Ma,Daxi Tian,Liben Li,Duainlin Que

DOI: https://doi.org/10.1016/j.jcrysgro.2007.05.034

IF: 1.8

2007-01-01

Journal of Crystal Growth

Abstract:Grown-in distribution and annealing behavior of crystal-originated particles (COPs) in Czochralski silicon (Cz-Si) wafer with germanium doping have been investigated. It was found that COPs with high density but small sizes were inclined to generate in germanium-doped Cz-Si (GCz-Si) wafer. The increase of boron atoms in Cz-Si crystal with the germanium doping could benefit the formation of COPs while the oxygen interstitials in GCz-Si wafer could enhance the generation of COPs with small sizes. Meanwhile, it was suggested that the germanium doping in Cz-Si would result in the poor thermal stability of COPs. It is proposed that the combination between germanium atom and vacancy could reduce the free vacancy concentration and the onset temperature for void generation, thus forming denser but smaller void. While the stress compensation induced by boron and germanium atoms could increase the vacancy fluxes in heavy-boron doped GCz-Si crystal, the presence of oxygen atom in GCz-Si would incline to benefit the formation of inner oxide walls of void, especially with small sizes. Furthermore, thinner oxide walls within void for GCz-Si crystal are considered to be charged for the easy annihilation by the germanium doping.
Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

ZQ Xi,DR Yang,J Xu,YK Ji,DL Que,HJ Moeller

DOI: https://doi.org/10.1063/1.1617377

IF: 4

2003-01-01

Applied Physics Letters

Abstract:Effect of intrinsic point defects on copper precipitation in large-diameter Czochralski silicon annealed at 1100 °C under air cooling was studied by means of scanning infrared microscopy (SIRM), optical microscopy (OM), and transmission electron microscopy (TEM). The SIRM images showed that, in the A-defect zone of the Cu-contaminated silicon wafers, the copper-precipitate colonies with larger size were observed, while in the D-defect zone almost no copper precipitates could be observed. However, the OM results revealed that the density of etching pits in the D-defect zone was higher than that in the A-defect zone, indicating that the copper precipitates with smaller size and higher density formed in the D-defect zone. The TEM investigation showed that the size of copper precipitate colonies in the A-defect zone was about 300 nm, while that in the D-defect zone was about 50 nm. It is considered that as-grown vacancies in the D-defect zone enhanced the nucleation of copper precipitates but hindered their growth, whereas the role of as-grown interstitial silicon on copper precipitation was inverse.
On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

Jan Vanhellemont,Xinpeng Zhang,Wubing Xu,Jiahe Chen,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1063/1.3503154

IF: 2.877

2010-01-01

Journal of Applied Physics

Abstract:The assumed impact of Ge doping on void formation during Czochralski-growth of silicon single crystals, is studied using scanning infrared microscopy. It has been reported that Ge doping leads to a reduction in the flow pattern defect density and of the crystal originated particle size, both suggesting an effect of Ge on vacancy concentration and void formation during crystal growth. The present study however reveals only a marginal-if any-effect of Ge doping on grown-in single void size and density. Double and multiple void formation might however be suppressed partially by Ge doping leading to the observed decrease in flow pattern defect density. The limited effect of Ge doping on single void formation is in agreement with earlier findings that Ge atoms are only a weak trap for vacancies at higher temperatures and therefor should have a smaller impact on the vacancy thermal equilibrium concentration and on single void nucleation than, e.g., interstitial oxygen and nitrogen.
The Effect of Germanium Doping on Oxygen Donors in Czochralski-Grown Silicon

L Hong,DR Yang,XG Yu,XY Ma,DX Tian,LB Li,DL Que

DOI: https://doi.org/10.1088/0953-8984/16/32/011

2004-01-01

Journal of Physics Condensed Matter

Abstract:The behavior of as-grown oxygen precipitation in Czochralski (Cz) silicon (Si) with the germanium (Ge)-doping has been investigated. It is found that the as-grown oxygen precipitation in Ge-doped Cz (GCz) Si can be enhanced in comparison with the conventional Cz Si at high temperatures, even above the formation temperature of void. It has been ascribed to the effect of heterogeneous nucleus sites supplied by the Ge-related complexes generated in GCz Si. Meanwhile, more large-sized as-grown oxygen precipitates can be formed in GCz Si is revealed through both a controlled ramping annealing and an isothermal annealing performed at high temperatures. This phenomenon is considered to be associated with the reduction in the critical radius of oxygen precipitates for the elevated temperatures.
Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Jiahe Chen,Jan Vanhellemont,Eddy Simoen,Johan Lauwaert,Henk Vrielinck,Joan Marc Rafi,Hidenori Ohyama,Joerg Weber,Deren Yang

DOI: https://doi.org/10.1002/pssc.201000142

2011-01-01

Abstract:Ge doping in Czochralski silicon (Cz-Si) crystal has been proposed as a successful application of the so-called "impurity engineering" leading to improved properties of Si wafers and/or devices. In an attempt to understand the beneficial effect of Ge doping on irradiation hardness for actual devices, substrates and p-on-n diodes, both with and without Ge doping, were exposed to electron irradiation and characterized using deep level transient spectroscopy (DLTS). Our results suggest a concentration of 10(19) cm(-3) Ge doping has only a limited effect on the total density of vacancy related deep levels in silicon. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Germanium Effect on Oxygen‐related Defects in Czochralski Silicon

DR Yang,JH Chen,H Li,XY Ma,DX Tian,LB Li,DL Que

DOI: https://doi.org/10.1002/pssa.200564507

2006-01-01

Abstract:The behaviours of germanium doped in Czochralski (CZ) silicon have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about oxygen related defects in germanium-doped CZ (GCZ) silicon is presented. The formation of oxygen precipitates during CZ silicon growth can be improved by germanium, and the oxygen precipitation during thermal cycles can be enhanced, so that the internal gettering (IG) ability of GCZ silicon wafers for metallic impurities is improved. Meanwhile, the morphology of oxygen precipitates can be changed in GCZ silicon. Thermal donors (TDs) can be suppressed by germanium doping as the result of the reaction between germanium and point defects, while new donors (NDs) can be strongly enhanced in GCZ silicon because of a process associated with the nucleation enhancement of oxygen precipitates with germanium doping. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Correlation Between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

Peng Dong,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.12693/aphyspola.125.972

2014-01-01

Abstract:The behaviors of copper (Cu) precipitation along the radial direction of the 300 mm Czochralski grown silicon wafer have been investigated. It is found that the density of Cu precipitates decreases from the center to edge of the silicon wafer. Moreover, it is revealed that the density of grown-in oxygen precipitates also decreases along the radial direction as mentioned above. Therefore, it is apparent that the Cu precipitate density is positively correlative to the grown-in oxygen precipitate density. This is due to that the grown-in oxygen precipitates can serve as the heterogeneous nucleation centers for Cu precipitation. It is suggested that the Cu decoration in combination with preferential etching can be used to indirectly evaluate the radial distribution of grown-in oxygen precipitates in the silicon wafers.
Dissolution of Oxygen Precipitates in Germanium-Doped Czochralski Silicon During Rapid Thermal Annealing

Jiahe Chen,Deren Yang,Xiangyang Ma,Hong Li,Liming Fu,Ming Li,Duanlin Que

DOI: https://doi.org/10.1016/j.jcrysgro.2007.06.037

IF: 1.8

2007-01-01

Journal of Crystal Growth

Abstract:The thermal stability of the oxygen precipitates in Czochralski silicon (Cz-Si) crystal with germanium doping has been investigated with rapid thermal annealing. It was found that the grown-in oxygen precipitates could be dissolved easily in germanium-doped Cz-Si (GCz-Si) than in conventional Cz-Si. After prolonged high-temperature thermal cycle, it was found that the germanium doping inclined to dramatically reduce the thermal stability of oxygen precipitates in Cz-Si crystal, either generated at low temperature (800°C) or formed at high temperature (1000°C). It is proposed that the germanium doping in Cz-Si could result in the oxygen precipitates with small size and plate shape, which reduce their thermal stability.

Copper Precipitation in Germanium-Doped Czochralski Silicon

Copper Precipitation in Nitrogen-Doped Czochralski Silicon

Germanium in Czochralski Silicon

High temperature nucleation of oxygen precipitates in Germanium-doped Czochralski silicon

Germanium Effect on Oxygen Precipitation in Czochralski Silicon

Scanning Infrared Microscopy Investigation of Copper Precipitation in Cast Multicrystalline Silicon

Enhancement Effect of Germanium on Oxygen Precipitation in Czochralski Silicon

Germanium-doped Czochralski silicon: Oxygen precipitates and their annealing behavior

Oxygen Precipitation in Ge-doped Czochralski-silicon at 900 °C Investigated by in Situ High Energy X-Ray Diffraction

Influence of Copper Precipitation on Oxygen Precipitation in Czochralski Silicon

Impact of Germanium Co-Doping on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon

Thermal History Effect on the Nucleation of Oxygen Precipitates in Germanium Doped Cz-silicon Studied by High-Energy X-ray Diffraction

Germanium Doping of Si Substrates for Improved Device Characteristics and Yield

Crystal-originated Particles in Germanium-Doped Czochralski Silicon Crystal

Effect of Intrinsic Point Defects on Copper Precipitation in Large-Diameter Czochralski Silicon

On the Assumed Impact of Germanium Doping on Void Formation in Czochralski-Grown Silicon

The Effect of Germanium Doping on Oxygen Donors in Czochralski-Grown Silicon

Electron Irradiation Induced Defects In Germanium-Doped Czochralski Silicon Substrates And Diodes

Germanium Effect on Oxygen‐related Defects in Czochralski Silicon

Correlation Between Copper Precipitation and Grown-In Oxygen Precipitates in 300~mm Czochralski Silicon Wafer

Dissolution of Oxygen Precipitates in Germanium-Doped Czochralski Silicon During Rapid Thermal Annealing