Abstract:Power consumption has become one of the bottlenecks limiting the future development of integrated circuits. Tunnel FETs (TFETs) and negative capacitance FETs (NCFETs) can break the subthreshold swing limitation (60 mV/dec at room temperature) of conventional metal-oxide-semiconductor field-effect transistor (MOSFET) to reduce the operating voltage and thus power consumption. However, induced by the band-to-band tunneling mechanism, TFETs have a subthreshold swing degradation issue and relatively low ON current. Although NCFETs with ferroelectric/dielectric gate stack can theoretically maintain a high ON current comparable to conventional MOSFET, the physical origin of sub-60 SS is controversial and the mechanism of switching behavior in NCFET is still not clear. In this work, by experimentally investigating the whole negative differential capacitance process and its gate voltage amplification coefficient, an intrinsic issue of SS degradation with increased gate voltage is also found in NCFET for the first time. Based on the physical investigation and simulation results, it is shown that the intrinsic SS degradation in NCFET is resulting from the instant dielectric polarization response. Both the decrease of dielectric thickness and the increase of dielectric constant may lead to the severer SS degradation, which is not favorable for scaled NCFETs.

Numerical Simulation on SITH's Negative-Resistance Transition

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

A Physics-Informed Neural Networks Algorithm for Simulating Semiconductor Devices

A Carrier-Based Analytical Theory for Negative Capacitance Symmetric Double-Gate Field Effect Transistors and Its Simulation Verification

Numerical Simulation of Negative Differential Resistance Characteristics in Si/Si1- χGeχRTD at Room Temperature

A Coupled Circuit-Ambipolar Diffusion Equation Model and Its Solution Methodology for Insulated Gate Bipolar Transistors

Compact Negative Bias Temperature Instability Model for Silicon Nanowire MOSFET (SNWT) and Application in Circuit Performance Simulation

A 2-D Nonlinear Ambipolar Diffusion Equation Model of an IGBT and Its Numerical Solution Methodology

A novel negative bias temperature instability model for nanoscale finfet

A Closed Form Analytical Model of Back-Gated 2-D Semiconductor Negative Capacitance Field Effect Transistors

Negative Capacitance DG Junctionless FETs: A Charge-based Modeling Investigation of Swing, Overdrive and Short Channel Effect

S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

Anomalous Negative Bias Temperature Instability Degradation Induced by Source/Drain Bias in Nanoscale Pmos Devices

Simulating Semiconductor Charge Transport

Channel Doping Effects in Negative Capacitance Field-Effect Transistors

Analytical Drain Current Model for Long-Channel Gate-All-around Negative Capacitance Transistors with a Metal–ferroelectric–insulator–semiconductor Structure

A General-purpose Two-dimensional Semiconductor Simulator

Physical Investigation of Subthreshold Swing Degradation Behavior in Negative Capacitance FET

Error analysis of drift-diffusion model of semiconductor device numerical simulation

Low-power Double-Gate MoS2 Negative Capacitance Transistors with Near-Zero DIBL

Validation Analysis And Test Of Semiconductor Device Simulator Gsres