Air-Stable Ambipolar Organic Field Effect Transistors with Heterojunction of Pentacene and N,N '-Bis(4-trifluoromethylben-zyl) Perylene-3,4,9,10-Tetracarboxylic Diimide

Li Jian-Feng,Chang Wen-Li,Ou Gu-Ping,Zhang Fu-Jia
DOI: https://doi.org/10.1088/1674-1056/18/7/064
2009-01-01
Abstract:Fabrication of ambipolar organic field-effect transistors (OFETs) is essential for the achievement of an organic complementary logic circuit. Ambipolar transports in OFETs with heterojunction structures are realized. We select pentacene as a P-type material and N,N'-bis(4-trifluoromethylben-zyl)perylene-3,4,9,10-tetracarboxylic diimide (PTCDI-TFB) as a n-type material in the active layer of the OFETs. The field-effect transistor shows highly air-stable ambipolar characteristics with a field-effect hole mobility of 0.18 cm(2)/(V.s) and field-effect electron mobility of 0.031 cm(2)/(V.s). Furthermore the mobility only slightly decreases after being exposed to air and remains stable even for exposure to air for more than 60 days. The high electron affinity of PTCDI-TFB and the octadecyltrichlorosilane (OTS) self-assembly monolayer between the SiO2 gate dielectric and the organic active layer result in the observed air-stable characteristics of OFETs with high mobility. The results demonstrate that using the OTS as a modified gate insulator layer and using high electron affinity semiconductor materials are two effective methods to fabricate OFETs with air-stable characteristics and high mobility.
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