Abstract:A strategy is proposed to achieve both p‐ and n‐type organic transistors using a single ambipolar organic semiconductor (OSC) and selectively doped organic semiconductor films (DOSCFs) as electrodes. The resulting unipolar devices feature simple processing, excellent performance, and stability. Notably, inverter circuits made from these unipolar transistors exhibit impressive performance and manufacturing simplicity. Unipolar p‐ and n‐type organic field‐effect transistors (OFETs) are essential for constructing organic circuits and complementary designs crucial for high‐performance electronics. Traditionally, fabricating these transistors requires separate p‐type and n‐type organic semiconductors (OSCs), which complicates the process due to intricate patterning, protection of the first OSC layer, and considerable material wastage. In this work, an innovative approach is introduced, inspired by silicon transistor fabrication to obtain unipolar OFETs, employing a single ambipolar OSC in conjunction with doped organic semiconductor films (DOSCFs) as electrodes. This results demonstrate that OFETs with DOSCF electrodes suppress ambipolarity dramatically and achieve on/off ratios that are two to three orders of magnitude higher than those with metal electrodes, along with excellent stability. The unipolar characteristics of the devices are attributed to the unique work function properties and the intrinsic charge carrier behavior of the DOSCF electrodes. Significantly, inverter circuits utilizing these unipolar transistors outperformed traditional ambipolar transistors with metal electrodes, achieving a fivefold increase in voltage gain. This novel strategy promises to enhance the practicality and economic viability of organic electronics, paving the way for more sustainable and high‐performance circuit designs.

Stable ambipolar organic–inorganic heterojunction field-effect transistors and inverters with Cytop interlayer

Low Temperature, Solution-Processed Ambipolar Field-Effect Transistors Based on Polymer/self-Assembled Monolayer Modified InOx Hybrid Structures for Balanced Hole and Electron Mobilities Exceeding 1 Cm2 V−1 S−1

Ambipolar Organic Field-Effect Transistors With Air Stability, High Mobility, And Balanced Transport

Air-Stable Ambipolar Organic Field Effect Transistors with Heterojunction of Pentacene and N,N '-Bis(4-trifluoromethylben-zyl) Perylene-3,4,9,10-Tetracarboxylic Diimide

Ambipolar Organic Field‐Effect Transistors and Complementary Circuits Based on Single Crystals with Alcohol Treatment

High-performance Ambipolar Field-effect Transistors with Ph-BTBT-10/PMMA/ZnO structure

High-performance Inverters Based on Ambipolar Organic-Inorganic Heterojunction Thin-Film Transistors

A soluble and air-stable organic semiconductor with high electron mobility

Indacenodithiophene‐based Single‐component Ambipolar Polymer for High‐performance Vertical Organic Electrochemical Transistors and Inverters

Air-stable ambipolar organic field-effect transistors based on phthalocyanince composites heterojunction

Achieving Unipolar Organic Transistors for Complementary Circuits by Selective Usage of Doped Organic Semiconductor Film Electrodes

Organic Heterostructures in Organic Field-Effect Transistors

Complementary Inverter Based on n‐Type and p‐Type OFETs with the Same Ambipolar Organic Semiconductor and ITO S/D Electrodes

Heterojunction Ambipolar Organic Transistors Fabricated by a Two-Step Vacuum-Deposition Process

Organic-Inorganic Heterojunction Field-Effect Transistors

A Multihalogenation Strategy for Ambipolar Transistors and High-Gain Inverters with Good Noise Margin.

High-Performance, Single-Component Ambipolar Organic Electrochemical Transistors with Balanced N/p-Type Properties for Inverter and Biosensor Applications

Antiambipolar, ambipolar, and unipolar charge transport in organic transistors based on a single vertical P-N heterointerface

Flexible organic field-effect transistors with high-reliability gate insulators prepared by a room-temperature, electrochemical-oxidation process

p-n heterojunctions composed of two-dimensional molecular crystals for high-performance ambipolar organic field-effect transistors

Newly Synthesized High‐k Polymeric Dielectrics with Cyclic Carbonate Functionality for Highly Stability Organic Field‐Effect Transistor Applications