Abstract:Ferroelectric LiNbO3 single crystals have piezoelectric, pyroelectric and electro-optic properties and are widely used in nonvolatile memories, sensors, and electro-optic modulators. The material is hard and relatively inert for dying etching using thick Cr/Ni mask layers which are incompatible with the CMOS manufacturing technologies. Moreover, the etching angles are generally below 80 degrees that could result in poor polarization retention and a large imprint effect. Here we developed an etching technique on the basis of the solid-state reaction and wet solution corrosion together that used CMOS-compatible SiO2 masks to fabricate large arrays of LiNbO3 nanodevices in high precision. The LiNbO3 nanopatterns at the regions beyond the SiO2 masks can react with the deposited Al metal below 500 degrees C in formation of amorphous layers in targeted thicknesses that vary with the annealing temperature and time at a reduced atmosphere. The amorphous layers can be dissolved in mixed solutions of H2O, NH4OH, and H2O2 at 85 degrees C, and the etching angles of memory cells in lateral sizes of 20-220 nm can approach 90 degrees after the passivation of the LiNbO3 surface layer. The transmission electron microscope study shows the oxygen deficiency at the surface. After the connection of the cell to two side electrodes, domain switching occurs under an applied horizontal electrode field along the polar Z-axis accompanying the formation of conducting domain walls against the peripheral unswitched domain at the substrate. The read current can highly reach the level of 2-20 mu A in high reliability. This etching technique promotes the large-scale fabrication of LiNbO3 nanodevices on the Si platform.

Selective Etching in LiNbO3 Combined of MeV O and Si Ion Implantation with Wet-Etch Technique

Advanced Etching Techniques of LiNbO3 Nanodevices

Monolithic Integration of a Lithium Niobate Microresonator with a Free-Standing Waveguide Using Femtosecond Laser Assisted Ion Beam Writing.

Nanometer-sized Etching of Lithium Niobate Domain Wall Devices

Selective etching of n-type silicon in pn junction structure in hydrofluoric acid and its application in silicon nanowire fabrication.

A Parametric Study of ICP-RIE Etching on a Lithium Niobate Substrate

The wet-etching behaviors of the SiO2 layer in LiNbO3-on-insulator structure

Lithium niobate ridge waveguides by nickel diffusion and proton-exchanged wet etching

Good-Quality and High-Efficiency Dicing for Thick LiNbO3 Wafers Using Picosecond Laser Pulses

Formation of Optical Waveguide and Annealing Behaviour of LiNbO 3 Implanted by 3.0-Mev Nickel Ions

Femtosecond-laser-assisted high-aspect-ratio nanolithography in lithium niobate

MgO:LiNbO3 Planar Waveguide Formed by MeV O2+ Implantation and Its Annealing Characteristics

N-Type Area of PN Junction Etched in BOE Solution

Isotropic atomic layer etching of MgO-doped lithium niobate using sequential exposures of H$_2$ and SF$_6$ plasmas

Photonic crystal fabrication in lithium niobate via pattern transfer through wet and dry etched chromium mask

MeV Ti ion-implantation-induced damages in LiNbO3

Integrated Lithium Niobate Microring Resonators Fabricated With 515 nm Femtosecond Laser Ablation

Investigation of etching two-dimensional microhole lattice array on lithium niobate with focused ion beam for fabricating photonic crystals

Pulsed Laser Deposition of Optical Waveguiding LiNbO 3 Films on SiO 2 Substrate

In-situ Poling of Lithium Niobate Films on Silicon Wafer by Applying a Low Electric Field During Pulsed Laser Deposition

Low-loss Lithium Niobate on Insulator (LNOI) Waveguides of a 10 cm-length and a Sub-nanometer Surface Roughness