Abstract:The microstructure and characteristic defects of heteroepitaxial GaN films grown on sapphire using molecular beam epitaxy (MBE) and metal-organic-chemical-vapor-deposition (MOCVD) methods and of homoepitaxial GaN grown on bulk substrates are described based on transmission electron microscopy (TEM), x-ray diffraction, and cathodoluminescence (CL) studies. The difference in arrangement of dislocations along grain boundaries and die influence of buffer layers on the quality of epitaxial films is described. The structural quality of GaN epilayers is compared to diat of bulk GaN crystals grown from dilute solution of atomic nitrogen in liquid gallium. The full width at half maximum (FWHM) of the x-ray rocking curves for these crystals was in the range of 20–30 arc sec, whereas for the heteroepitaxially grown GaN the FWHM was in the range of 5–20 arc min. Homoepitaxial MBE grown films had FWHMs of about 40 arc sec. The best film quality was obtained for homoepitaxial films grown using MOCVD; these samples were almost free from extended defects. For the bulk GaN crystals a substantial difference in crystal perfection was observed for the opposite sides of the plates shaped normal to the c direction. On one side the surface was almost atomically flat, and the underlying material was free of any extended structural defects, while the other side was rough, with a high density of planar defects. This difference was related to the polarity of the crystal. A large difference in crystal stoichiometry was also observed within different sublayers of the crystals. Based on convergent beam electron diffraction and cathodoluminescence, it is proposed that GaN antisite defects are related to the yellow luminescence observed in these crystals.

Hexagonal Defects Analysis of GaN Epilayers Grown on Si Substrates

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Reduction of Dislocations in GaN Epilayer Grown on Si (111) Substrates Using a GaN Intermedial Layer

Defects in GaN Pyramids Grown on Si(111) Substrates by Selective Lateral Overgrowth

Hexagonal GaN Epitaxial Growth on Si(111) by a Vacuum Reaction Method

Effect of AlN nucleation layer thickness on the quality of GaN grown on Si(111)

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

An Initial Exploration of GaN Grown on a Ge-(111) Substrate

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

Growth and Defects of AlN Epilayers by RF Molecular Beam Epitaxy

Structural Defects In Heteroepitaxial And Homoepitaxial Gan

Structural Characterization of Al0.55ga0.45n Epitaxial Layer Determined by High Resolution X-Ray Diffraction and Transmission Electron Microscopy

Gan Grown on Ain/Sapphire Templates