Abstract:A new critical dimension (CD, often synonymously used for line width) reference material with improved vertical parallel sidewalls (IVPSs) has been developed and characterised. The sample has a size of 6 mm × 6 mm, consisting of 4 groups of 5 × 5 feature patterns. Each feature pattern has a group of five reference line features with a nominal CD of 50 nm, 70 nm, 90 nm, 110 nm and 130 nm, respectively. Each feature pattern includes a pair of triangular alignment marks, applicable for precisely identifying the target measurement position, e.g. for comparison or calibration between different tools. The geometry of line features has been investigated thoroughly using a high-resolution transmission electron microscope and a CD atomic force microscope (CD-AFM). Their results indicate the high quality of the line features: the top corner radius of <7 nm, vertical sidewall (slope mostly within 90° ± 0.5°) and very small line width variation (LWR down to 0.36 nm). The application of the developed sample for calibrating the scaling factor and effective tip geometry of the CD-AFM are demonstrated. The scaling factor of the CD-AFM is calibrated to be 0.9988, coinciding well with the theoretical value 1 as the tool was calibrated to a traceable metrological atomic force microscope. The effective width of a CDR120-EBD tip is calibrated as 128.32 nm. Finally, a strategy for the non-destructive calibration of the developed sample is introduced, which enables the application of the reference material in practice.

Fabrication and Characterization of Sub-45 Nm Multiple Linewidth Samples

Fabrication of Nanoscale Linewidth Standards Based on Multilayer Thin Film Deposition Technique

Sub-diffraction Optical Beam Lithography Based on a Center-Non-zero Depletion Laser

Measurement of Linewidth for Nano-scale Lines Prepared by Multilayer Thin Films

Optimization and Fabrication of Chromium Grating in Self-Traceable Interferometer

Fabrication and characterization of typical nano scale structures

Characterization of Line Edge Roughness and Line Width Roughness of Nano-Scale Typical Structures.

20-Nm Linewidth Nanoimprint Mold Prepared by Selectively Etched Multiplayer Thin Film

Measurement of linewidth and line edge roughness for ID nano CD linewidth standard product lines

Analysis of Linewidth Uniformity and Line Edge/Width Roughness in a 5 Nm Logic SAQP Process

Fabrication and characterization of nano-scale lines through anodic porous alumina membrane

Fabrication of 11-Nm-wide Silica-Like Lines Using X-Ray Diffraction Exposure

A strategy to fabricate nanostructures with sub-nanometer line edge roughness

High-Precision Regulation of Nano-Grating Linewidth Based on ALD

Fabrication of Nanoimprint Mold by Multilayer Film Deposition Technique

Cross magnitude multi scale line width standard and preparation method thereof

AFM Tip-Based Fabrication of Silicon Nanostructures with Reduced Subsurface Amorphous Layers

Direct Writing Nanostructures on Au Nano-Film by Laser Irradiating Cantilevered Scanning Near-Field Optical Microscope Tip

Development and characterisation of a new line width reference material

Fabrication of Single-Crystal Silicon Nanoslits with Feature Sizes Down to 4 nm and High Length-Width Ratios

Linewidth Characterization of a Self-traceable Grating by SEM