Optical Nonlinearity of Oxygen-Rich SiOx Thin Films

W. T. Li,R. Boswell,M. Samoc,A. Samoc,Q. H. Qin
DOI: https://doi.org/10.1049/el:20073668
2007-01-01
Electronics Letters
Abstract:Highly oxygen-rich SiOx thin films were prepared using a helicon plasma activated reactive evaporation technique. A small second-order optical nonlinearity was observed in the as-grown films, and thermal poling induced nonlinearity in the films was found to be much larger than that in stoichiometric SiO2 films. These phenomena were associated with the non-impurity defects in the oxygen-rich films.
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