Study on Bis[Phthalocyaninato] Praseodymium Complex/Silicon Hybrid Chemical Field-Effect Transistor Gas Sensor

D Xie,YD Jiang,W Pan,JH Jiang,ZM Wu,YR Li
DOI: https://doi.org/10.1016/s0040-6090(01)01749-7
IF: 2.1
2002-01-01
Thin Solid Films
Abstract:A new kind of sandwich-like bis[2,3,9,10,16,17,23,24-octakis(octyloxy)phthalocyaninato] Praseodymium complex Pr(Pc*)2 [Pc*=Pc(OC8H17)8] is used as film-forming material. Pure Pr(Pc*)2 ultrathin film and Pr(Pc*)2 and octadecanol(OA) mixed ultrathin films were prepared by the Langmuir–Blodgett (LB) technique. Based on the conventional metal-oxide–semiconductor–field-effect transistor (MOSFET), a new chemical field-effect transistor (ChemFET) gas-sensing device was fabricated by depositing the Pr(Pc*)2/OA (1:3 molar ratio) mixed LB film on the gate area of MOSFET replacing the gate metal. The sensitive property of Pr(Pc*)2/OA mixed LB film based ChemFET sensor to nitrogen dioxide (NO2) gas is studied by the change of drain current (Ids) during gas exposure. The Pr(Pc*)2/OA mixed LB film ChemFET gas sensor can detect NO2 gas down to 5 ppm. The qualities are attributed to amplification by the FET and the ordered nature of LB film. The mechanism of sensitivity of Pr(Pc*)2/OA mixed LB film ChemFET to NO2 is also studied in the paper.
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