Ultrahigh Sensitivity and Layer-Dependent Sensing Performance of Phosphorene-Based Gas Sensors

Shumao Cui,Haihui Pu,Spencer A. Wells,Zhenhai Wen,Shun Mao,Jingbo Chang,Mark C. Hersam,Junhong Chen
DOI: https://doi.org/10.1038/ncomms9632
IF: 16.6
2015-01-01
Nature Communications
Abstract:Two-dimensional (2D) layered materials have attracted significant attention for device applications because of their unique structures and outstanding properties. Here, a field-effect transistor (FET) sensor device is fabricated based on 2D phosphorene nanosheets (PNSs). The PNS sensor exhibits an ultrahigh sensitivity to NO 2 in dry air and the sensitivity is dependent on its thickness. A maximum response is observed for 4.8-nm-thick PNS, with a sensitivity up to 190% at 20 parts per billion (p.p.b.) at room temperature. First-principles calculations combined with the statistical thermodynamics modelling predict that the adsorption density is ∼10 15 cm −2 for the 4.8-nm-thick PNS when exposed to 20 p.p.b. NO 2 at 300 K. Our sensitivity modelling further suggests that the dependence of sensitivity on the PNS thickness is dictated by the band gap for thinner sheets (<10 nm) and by the effective thickness on gas adsorption for thicker sheets (>10 nm).
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