Erbium Bis[phthalocyaninato] Complex LB Film Gas Sensor

D Xie,W Pan,YD Jiang,YR Li
DOI: https://doi.org/10.1016/s0167-577x(02)01242-9
IF: 3
2003-01-01
Materials Letters
Abstract:A new kind of sandwich-like erbium bis[2,3,9,10,16,17,23,24-octakis(octyloxy)phthalocyaninato] complex Er[Pc*]2 (Pc*=Pc(OC8H17)8) was used as film-forming material. Pure Er[Pc*]2 and mixture of Er[Pc*]2 and stearic acid (SA) deposited from both pure water and 10−4 M Cd2+ subphases are investigated. It is found that a mixture of 1:6 Er[Pc*]2/SA forms an excellent material for the fabrication of gas-sensing LB film by studying the film-forming characteristic. A new gas sensor has been fabricated by incorporating the multilayer Er[Pc*]2 LB film into the gate electrode of a MOSFET, forming an array of charge flow transistor (CFT). On the application of a gate voltage (VGS) greater than the threshold voltage (VTH), a delay was observed in the response of the drain current. It is due to the time taken for the resistive gas-sensing film to charge up to VGS. This delay characteristic was found to depend on the concentration of NO2. Results are presented showing that the device can detect reversibly concentration of NO2 gas down to 5 ppm at room temperature.
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