A Novel Gas Sensor Based on Charge-Flow Transistor

谢丹,蒋亚东,姜健壮,吴志明,李言荣
DOI: https://doi.org/10.3969/j.issn.1674-4926.2001.07.024
2001-01-01
Abstract:A new kind of sandwich-like Praseodymium bis[2,3,9,10,16,17,23,24-octakis(octyloxy)phthalocyaninato] complex Pr(Pc*)2 (Pc*=Pc(OC8H17)8) is used as film-forming material. Mixed ultrathin films are prepared at Pr(Pc*)2:octadecanol (OA) being 1:3 with Langmuir-Blodgett (LB) technique. A novel gas sensor is developed by filling the gap area of a charge-flow transistor (CFT) with the multilayer LB film. Applying a gate voltage (VGS) that is greater than the threshold voltage (VTH), a delay can be observed in the response of the drain current due to the time of the resistive gas-sensing film to be charged to VGS. This delay is dependent on the concentration of NO2. Experimental results show that the CFT device is capable of detecting at the concentration of NO2 gas down to 5ppm at room temperature. For the same sensitive film the change of drain current (IDS) with time has good repeatability.
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