Abstract:Due to the unique anisotropic chemical and physical properties, two-dimensional (2D) layered materials, such as IV-VI monochalcogenides with puckered honeycomb structure, have received considerable interest recently. Among the IV-VI layered MX (M = Ge, Sn; X = Se, S) compounds, germanium sulfide (GeS) stands out for its strongest anisotropic thermal conductivities and figure-of-merit values. Additionally, the layer-independent direct energy bands (Eg ∼1.6 eV, E1 ∼2.1 eV) of GeS flake provide excellent insights into further applications as visible photodetectors. Herein, the polarization-tunable nonlinear absorption (NA) patterns of GeS flake have been systematically investigated. Specifically, both the polarization-dependent Raman spectroscopy and the linear absorption (LA) spectroscopy were employed to characterize the lattice orientation and absorption edges of the 251-nm GeS flake. Considering the low damage threshold of GeS flake, the GeS/graphene heterostructure was fabricated to increase the threshold without changing the nonlinear properties of GeS. Our NA results demonstrated that a 600-nm femtosecond laser with different polarizations would excite the saturated-absorption (SA) effect along armchair and reverse-saturated-absorption (RSA) effect along zigzag in the GeS/graphene heterostructure. Moreover, the function of the polarization-based GeS/graphene heterostructure all-optical switch was experimentally verified. Notably, thanks to the polarization-dependent NA patterns (SA/RSA) of GeS, the "ON" and "OFF" states of the all-optical switch can be accomplished by high and low transmittance states of continuous-wave laser (532 nm, 80 nW), whose state can be controlled by the polarization of femtosecond switching laser (600 nm, 35 fs, 500 Hz, 12 GW cm−2). The ON/OFF ratio can achieve up to 17% by changing polarization, compared with the ratios of 3.0% by increasing the incident power of switching light in our experiment. The polarization-tunable absorption patterns introduced in this work open up real perspectives for the next-generation optoelectronic devices based on GeS/graphene heterostructure.

Photobleaching in amorphous GeS2 thin films

Photoinduced Effects in Amorphous Semiconductor Ge(S, Se)(2) Chalcogenide Films

Changes of Properties and Structure in Amorphous GeS_2 Films by Laser Illumination

Photoinduced changes of structure and properties in amorphous GeSe2 films

Photoinduced Phenomena in Amorphous Ge-As-S System

Millisecond Kinetics of Photo-Darkening/bleaching in Xge45se55-(1−X)as45se55 Chalcogenide Amorphous Films

Study on the Optical Properties and Erasing Performance of Ge2Sb2Te5 Phase Change Thin Films

Optical recording performance of GeSb2Te4 phase change thin film material using short-wavelength (514.5 nm) laser

Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films

Effect Of Photo-Oxidation On Photobleaching Of Gese2 And Ge2se3 Films

Nonlinear optical response of polycrystalline GeSe films

Optical constants acquisition and phase change properties of Ge2Sb2Te5 thin films based on spectroscopy

Microstructural changes of phase change GeSb2Te4 thin film in short-wavelength optical storage

Polarization-tunable nonlinear absorption patterns from saturated absorption to reverse saturated absorption in anisotropic GeS flake and an application of all-optical switching

Photosensitive defects in germanium doped silica glass

Sub-Picosecond Non-Equilibrium States in the Amorphous Phase of GeTe Phase-Change Material Thin Films

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

Phase Change and Optical Band Gap Behavior of Ge–Te–Ga Thin Films Prepared by Thermal Evaporation

Photo-bleaching in Ge(S90Se10)2 Chalcogenide Films Prepared by Pulsed Laser Deposition

High-Resolution X-Ray Photoelectron Spectroscopy Study of Photo-Oxidation of Amorphous Oxy-Chalcogenide Films

Optical–electrical Hybrid Operation with Amorphous Ge 1 Sb 4 Te 7 Phase Change Thin Films