Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

Application of Nano-Crystalline Silicon Film in the Fabrication of Field-Em Ission Pressure Sensor

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Nano-Diamond Film Pressure Sensor

Nanostructured Diamond Film on Etched Silicon and Its Field Emission Behavior

Patterned Uniformly Orientated Silicon Nanocrystallite Films and Efficient Field Emission Characteristics

Direct Growth of Graphene Films on 3d Grating Structural Quartz Substrates for High-Performance Pressure-Sensitive Sensors

Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Field Emission from a Periodic Amorphous Silicon Pillar Array Fabricated by Modified Nanosphere Lithography.

Direct Observation of Sub-Threshold Field Emission from Silicon Nanomembranes

Field Emission Properties of Nanocomposite Carbon Nitride Films

Amorphous Selenium Based Photodetector Driven by Field Emission Current from N-doped Diamond Cold Cathode

Strong Electron Field Emission from Nano-CdS Modified Porous Silicon

Field Emission From Crystalline Copper Sulphide Nanowire Arrays

Electron Field Emission of Nanocrystalline Si Prepared by Laser Crystallization

Nano-Structured Silicon: Fabrication, Optical Property, Defect States and Device Application

Formation and Field Emission Characteristics of Amorphous and Crystalline Si Nanoarrays

Fabrication and Field Emission Properties of Multi-Walled Carbon Nanotube/silicon Nanowire Array

Enhanced Electron Field Emission from Dense Si Nano-Dots Prepared by Laser Crystallization of Ultrathin Amorphous Si Films

Polysilicon Nanofilm Pressure Sensor

The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching

Field Emission from Amorphous Carbon Nitride Films Deposited on Silicon Tip Arrays