Abstract:The complexity of charge trapping in semiconductor devices, such as high-kappa MOSFETs, is increasing as the devices themselves become more complicated. To facilitate research into such charge-trapping issues, here we propose an optimized simulation framework that is composed of density-functional theory (DFT) for electronic structure calculation and Marcus theory for the calculation of charge-trapping rates. The DFT simulations are either carried out or corrected by using the Heyd-Scuseria-Ernzerhof hybrid functional. Using this framework, the hole-trapping characteristics along multiple paths in Si/SiO2/HfO2 stacks are investigated, and the relative importance of each path is revealed by calculating its exact hole-trapping rate. Besides the study on crystalline stacks, we also create an amorphous stack, which is more realistic compared with experiments and real devices, to reveal more active trapping centers and to study the statistical feature of charge trapping induced by structural disorder. In addition, to seek effective measures for relieving these charge-trapping problems, the effects of hydrogen and fluorine passivations are discussed, and physical insights for improving the performance of high-kappa MOSFETs are provided.

Energy and Spatial Distributions of Electron Traps Throughout <formula formulatype="inline"><tex Notation="TeX">$\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> Stacks as the IPD in Flash Memory Application

An Assessment of the Location of As-Grown Electron Traps In$hboxhfo_2$/hfsio Stacks

Self-Consistent Simulation of Quantum Dot Flash Memory Device with Sio2 and Hfo2 Dielectrics

Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on Wse2

Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks

Composition Dependent Charge Retention in Amorphous HfxAl1−xOy Dielectric Layers

Evaluation and Solutions for P/E Window Instability Induced by Electron Trapping in High-Kappa Intergate Dielectrics of Flash Memory Cells

Dependence Of Electrons Loss Behavior On The Nitride Thickness And Temperature For Charge Trap Flash Memory Applications

Al2o3/Geox/Ge Gate Stacks with Low Interface Trap Density Fabricated by Electron Cyclotron Resonance Plasma Postoxidation

In Situ Electron Holography Study Of Charge Distribution In High-Kappa Charge-Trapping Memory

Read and Pass Disturbance in the Programmed States of Floating Gate Flash Memory Cells with High- $\kappa$ Interpoly Gate Dielectric Stacks

In Situ Electron Holography Study of Charge Distribution in High-Κ Charge-Trapping Memory

Simulation of Charge Trapping Memory with Novel Structures

Electronic Structure and Charge-Trapping Characteristics of the Al2O3-TiAlO-SiO2 Gate Stack for Nonvolatile Memory Applications

Visualization on Charge Distribution Behavior in Thickness-Scalable HfO2 Trapping Layer by In-Situ Electron Holography and Kelvin Probe Force Microscopy Technology

A New Multipulse Technique for Probing Electron Trap Energy Distribution in High- $\kappa$ Materials for Flash Memory Application

Electrical Characteristics Of Charge Trap Flash Memory With A Composition Modulated (Zro2)(X)(Al2o3)(1-X) Film

Effects Of Traps On Charge Storage Characteristics In Metal-Oxide-Semiconductor Memory Structures Based On Silicon Nanocrystals

Characterizing the Charge Trapping Across Crystalline and Amorphous Si/SiO 2 /hfo 2 Stacks from First-Principle Calculations

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

Al 2 O 3 –cu 2 O Composite Charge-Trapping Nonvolatile Memory