Abstract:Electron trapping in HfO 2 -based MOS structures was studied through pulsed capacitance-voltage (C-V) technique. 10 nm HfO 2 layer was deposited by atomic layer deposition over a HF last treated Si substrate. The C-V curves were observed to shift to positive voltages driven by the positive applied voltage along the pulses, consistent with electron trapping due to tunneling transitions between the substrate and pre-existing defects within the oxide and the subsequent lattice relaxation through electron-phonon interaction. The dependences of the voltage shift for a given capacitance value ( ΔV C ) with stress bias and time, allowed to distinguish two mechanisms. An initial trapping process occurs for times shorter than the microsecond, probably associated with a thin non-stoichiometric SiO x interfacial layer, which is followed by a trapping process that starts after tens of μs and progressively slowed down, associated with traps within the HfO 2 layer. Numerical simulations yield for the HfO 2 traps an energy of 1.3 eV below the conduction band edge, decreasing exponentially with the distance from the Si interface with a characteristic length of 1.7 nm; and phonon and relaxation energies of 50 meV and 1 eV, respectively. These physical parameters are consistent with previous reports of electron trapping in HfO 2 layers deposited on a controlled interfacial layer, suggesting that trapping properties of defects inside the HfO 2 layer are insensitive to the treatment of the Si surface before HfO 2 deposition. On the other hand, the observed large initial trapping suggests that the non-controlled SiO x interfacial region is more defective than a controlled one.

Properties and dynamic behavior of electron traps in HfO2/SiO2 stacks

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Determination of Capture Cross Sections for As-Grown Electron Traps in HfO2∕HfSiO Stacks

The identification of traps in HfO 2 -based FeFET with SiON as an interlayer using current transient method

Characterization of Electron Traps in Si-Capped Ge MOSFETs with $\hbox{hfo}_{2}/\hbox{sio}_{2}$ Gate Stack

Electron trapping in HfO 2 layer deposited over a HF last treated silicon substrate

Trap characteristics of hafnium oxide-based ferroelectric field-effect transistors measured by using a current transient method

Distinguishing Interfacial Hole Traps in (110), (100) High-K Gate Stack.

Characterizing the Charge Trapping Across Crystalline and Amorphous Si/SiO 2 /hfo 2 Stacks from First-Principle Calculations

Investigation of Extra Traps Measured by Charge Pumping Technique in High Voltage Zone in P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Hfo2/Metal Gate Stacks

Energy and Spatial Distributions of Electron Traps Throughout <formula formulatype="inline"><tex Notation="TeX">$\hbox{SiO}_{2}/\hbox{Al}_{2}\hbox{O}_{3}$</tex></formula> Stacks as the IPD in Flash Memory Application

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Experimental Study on the Oxide Trap Coupling Effect in Metal Oxide Semiconductor Field Effect Transistors with HfO2 Gate Dielectrics

Characterization of Interface Traps in SiO$_2$/SiC Structures Close to the Conduction Band by Deep-Level Transient Spectroscopy

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On-The-Fly Interface Trap Measurement And Its Impact On The Understanding Of Nbti Mechanism For P-Mosfets With Sion Gate Dielectric

Traps Around Ge Schottky Junction Interface: Quantitative Characterization and Impact on the Electrical Properties of Ge MOS Devices

Relaxation kinetics of interface states and bulk traps in atomic layer deposited ZrO2/ β -Ga2O3 metal-oxide-semiconductor capacitors

A New Multipulse Technique for Probing Electron Trap Energy Distribution in High- $\kappa$ Materials for Flash Memory Application

Hole traps in silicon dioxides. Part I. Properties

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors