Preparation,Structural and Strain Properties of ZnO Thin Films
DENG Lei-lei,WU Sun-tao,LI Jing
DOI: https://doi.org/10.3321/j.issn:1000-7032.2006.06.016
2006-01-01
Chinese Journal of Luminescence
Abstract:ZnO has a wide band gap of 3.37 eV, low lasing power threshold for optical pumping at room temperature, and UV emission resulted from a large exciton binding energy of 60 meV, so it can be used as light emitting diodes (LED), photodetectors, and short wave laser. To fabricate the devices, high quality ZnO thin films are often required, such as they should have good crystal properties with high c-axis orientation and low stress. Many researches have been done on the preparation of high quality ZnO films in recent years. In this paper, ZnO thin films were prepared by RF magnetron sputtering method on SiO_2/Si substrate at different ratio of Ar/O_2, and were annealed at different annealing temperatures to improve the films quality. The effects of the ratio of Ar/O_2 and annealing treatment on the ZnO films properties were discussed. The crystal structures and surface morphologies of ZnO thin films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The SEM results show that the grain size of the as-deposited films is about 40 nm, which grows up with the increase of the annealing temperature. The XRD results show that as-deposited films have dominant c-axis orientation and the quality of ZnO films is better when grown with the Ar/O_2 gas ratio of 1∶1. After the annealing treatment, the position of ZnO (002) XRD peak shifts from 34.06° to 34.64° , and the intensity of the ZnO (002) peak pattern increases while the full width at half maxi-mum (FWHM) of the ZnO (002) peak decreases, which demonstrates that the quality of the ZnO films was improved by annealing. The as-deposited ZnO film experiences the tensile stress along the c-axis orientation, while the compressive stress exits in the annealed ZnO films. When the annealing temperature rises up, the tensile stress along the c-axis orientation decreases, while the compressive stress increases; at the same time, the grain size of the films is increased. The reason of the stress variation was discussed, that is the change of defects in the film, it will causes the variety of the stress.