Abstract:ZnO thin films were deposited on Al2O3(001)substrates by megnetron sputtering method at 500 ℃,550 ℃,600 ℃ and 650 ℃,respectively.The as-deposited ZnO films samples were annealed at 800 ℃ and 1000 ℃.The structure,electrical and optical properties of the ZnO thin films were investigated by X-ray diffraction(XRD),Hall and transmittance spectrum measurements.The results indicated that crystalline quality,electrical and optical properties could be highly improved by proper growth temperature and annealing temperature.

Influence of Growth and Annealing Temperatures on Properties of ZnO Thin Films Prepared by RF Magnetron Sputtering