Abstract:Publication date: 22 August 2024 Source: Solid State Phenomena Vol. 359 Author(s): Mathieu Opprecht, Sébastien Kerdilès, Jérôme Biscarrat, Philippe Godignon, Cédric Masante, Romain Laviéville, Nicolas Vaxelaire, Patrice Gergaud, Adeline Grenier, Carl Jung, Fabien Roze, Zeinab Chehadi, Louis Thuries, Lu Lu, Toshiyuki Tabata Nowadays, the growing worldwide electrification requires new materials for power management. SiC currently dominates the market thanks to excellent energy efficiency and broad operating capabilities. The present paper proposes an experimental study of the Ni-SiC backside ohmic contact formation using 308 nm nanosecond laser annealing (NLA). After Nickel (80 nm) sputtering over 4H-SiC wafers, various laser conditions are investigated, with energy density (ED) ranging from 2.4 to 5.4 J/cm2, pulse number from 1 to 20 and chuck temperature from 25 °C (RT) to 400 °C. For all series, a common scenario is noticed as the ED increases, with first solid-state reactions, then local melt and, finally, complete top layer melt and de-wetting at high ED. An in-depth understanding of the impact of laser conditions on these stages is achieved, based on electrical data, Raman spectroscopy, optical microscopy, Scanning Electron Microscopy (SEM) and Scanning Transmission Electron Microscopy (STEM). Results reveal that both high pulse numbers and the use of a hot chuck enable to significantly reduce the ED needed to form low resistance contacts. In addition, sheet resistances and contact resistivities are linked to the microstructure evolution upon NLA exposure. As a proof-of-concept, an acceptable process point yields a contact resistivity around 5×10-5 Ω cm2 when the wafer is processed at 25 °C and a value as low as 10-5 Ω cm2 for 400 °C processing. The mechanisms involved and discussed in the present work may very likely pave the way for other contact formation with limited thermal budget.

Study of the Ohmic Contact Property of SiC

Electrical Characteristics of Ti/Al/Ti/Au Multilayer Ohmic Contacts to N-Type GaN

Effects of Surface Treatment on Non-alloyed Ti/Al Ohmic Contact of n-GaN

Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings

A method to improve the specific contact resistance of 4H-SiC Ohmic contact through increasing the ratio of sp 2 -carbon

Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods

Reaction Kinetics Investigation of Ni Ohmic Contacts on N-Type 4H-SiC

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

Fabrication of Ohmic Contact on the Carbon-Terminated Surface of N-Type Silicon Carbide

4H-SiC Ohmic Contact and Measure Technology

The Thermal Stability Study and Improvement of 4H-Sic Ohmic Contact

How to Accurately Determine the Ohmic Contact Properties on n-Type 4H-SiC

Formation of ohmic contacts on heavily Al + -implanted p-type SiC without alloying process

4H-SiC Ohmic contacts formation by MoS2 layer intercalation: A first-principles study

Ni/4H-SiC Ohmic Contact Formation Using Multipulse Nanosecond Laser Annealing

The Ohmic Contact of 4H-Sic Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

Fabrication of Ohmic Contact on N-Type SiC by Laser Annealed Process: A Review

Ohmic Contact and Interfacial Reaction of Ti/Al/Pt/Au Metallic Multi-Layers on N-Alxga1−xn/gan Heterostructures

Effects of annealing temperature on the structure and electrical properties of tungsten contacts to n-type silicon carbide

Effect of graphite related interfacial microstructure created by high temperature annealing on the contact properties of Ni/Ti/6H-SiC

The Study of Physical and Irradiation Properties of SiO_2/SiC Interface