Abstract:As the third generation semiconductor material,gallium nitride(GaN)is widely used in electronic devices and optoelectronic devices due to its excellent characteristics such as wide band gap,high breakdown field strength,high electron mobility,outstanding thermal conductivity,and direct band gap.However,it is difficult to obtain high quality single crystal GaN thin films due to the mismatch between GaN material and substrate in early phase of preparation.Until the two-step growth method is proposed,in which the nucleation layer of aluminum nitride(AlN)is firstly grown on the substrate at low temperature,and then GaN is grown at high temperature,the quality of GaN is greatly improved.Nowadays,AlN nucleation layers are fabricated via magnetron sputtering and molecular beam epitaxy,etc.To further improve the quality of GaN crystals,this study used plasma-enhanced atomic layer deposition(PEALD)method to prepare AlN nucleation layers for the epitaxial growth of GaN on a two-inch c-plane sapphire substrate.Compared with the magnetron sputtering method and molecular beam epitaxy method,the crystal quality of AlN prepared by PEALD method displays advantages of simple process,low cost and high yield.Measurements on deposited AlN films show that the deposition rate is 0.1 nm/cycle and the films have island-like structures varying with its thickness.Epitaxial GaN measurements show that GaN epitaxial layer can obtain the smoothest surface with a root mean square roughness of 0.272 nm,the best optical properties,and the lowest dislocation density when AlN is deposited with a thickness of 20.8 nm.In conclusion,a new method of epitaxial single crystal GaN on AlN prepared by PEALD has been built with optimal deposition at 20.8 nm of AlN to obtain high quality GaN thin films,it can be used to prepare high electron mobility transistors and light-emitting diodes.

Characteristics of GaN epilayer grown on Al2O3 with AlN buffer layer by molecular beam epitaxy

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

High Quality GaN Layers Grown on SiC Substrates with AlN Buffers by Metalorganic Chemical Vapor Deposition

Influence of AlN Buffer Layer Thickness on Structural Properties of GaN Epilayer Grown on Si (111) Substrate with AlGaN Interlayer

Effect of AlN Nucleation Layer on the Structural Properties of Bulk GaN Grown on Sapphire by Molecular-Beam Epitaxy

The Influence of Aln Buffer Layer Thickness Grown by Pulsed Atomic Layer Epitaxy on the Properties of Gan Epilayer

Epitaxy Single Crystal GaN on AlN Prepared by Plasma-enhanced Atomic Layer Deposition

Effect of AlN Buffer Layer Thickness on the Properties of GaN Films Grown by Pulsed Laser Deposition

High-quality crack-free GaN epitaxial films grown on Si substrates by a two-step growth of AlN buffer layer

Comparative Study on MOCVD Growth of a -Plane GaN Films on r -Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Growth of High Quality GaN Layers with AlN Buffer on Si(1 1 1) Substrates

Employing Al buffer layer with Al droplets-distributed surface to obtain high-quality and stress-free GaN epitaxial films on Si substrates

Surface Morphology of AlN Buffer Layer and Its Effect on GaN Growth by Metalorganic Chemical Vapor Deposition

A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on Si（111） Studied by HRXRD and RBS/Channeling

Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Study on AlN Buffer Layer for GaN on Graphene/copper Sheet Grown by MBE at Low Growth Temperature

The influence of AlN buffer layer thickness on the properties of GaN epilayer

Microstructural and Optical Properties of GaN Buffer Layers Grown on Graphene

Enhancing two-dimensional growth of high-temperature AlN buffer to improve the quality of GaN on Si grown by ex situ two-step method