Abstract:Considering the technical status and existing problems of traditional silicon wafer chemical mechanical polishing (CMP), especially for the diameter of silicon wafer increasing, constantly, the surface quality and efficiency of silicon wafer polishing are becoming an urgent problem to be solved, so the research subject of ultrasonic vibration hybrid polishing new technique was proposed. By means of mechanism theoretical analysis research, firstly, the processing mechanism of hybrid polishing was studied systematically. An investigation of polishing mechanisms based on the micro-contact model between the polishing pad and the polishing surface of silicon wafer was developed. Polishing mechanism theoretical analysis shows that when ultrasonic vibrations combined with mechanical and chemical, the performance of polishing slurry is improved in the process of CMP, therefore to create favorable conditions. To verify the established theory, then, a series of experiments to investigate the traditional CMP are conducted, as well as the polishing tool with the forms of ultrasonic vibration, the polishing pad, the polishing surface quality, velocity at polishing point v, and slurry supplying Q on silicon wafer polishing. Experiment findings showed that, in the same polishing conditions, especially, hybrid polishing by ultrasonic-elliptic-vibration has gained more advantage over the effect of silicon wafer polishing. When ultrasonic-elliptic-vibration is put in polishing tool, the silicon wafer polished surface roughness Ra from the traditional method of polishing 0.077μm going down to the 0.042μm, the no-smooth rate KR which describes the polished surface morphology is significantly improved, and the material removal rate increases by 18%. Experimental research findings of the surface quality and the material removal mechanism are shown to be consistent with the theoretical analysis.

Method of Measurement Material Micro-Remove Rate of Silicon Wafer Edge Treatment by Chemical-Mechanical Polishing

Method of In-Process Measurement of Wafer Surface Quality Based on Laser Scattering Principle

Experiment on silicon wafer edge hybrid polishing of ultrasonic vibration and chemical mechanical

High Efficiency Processing of Si Wafer Edge by Ultrasonic Vibration Assisted Polishing

Research on Surface Topography of Silicon Wafer in Chemical-mechanical Polishing

A Feasibility Study of Silicon Wafer Edge Treatment by Ultrasonic Assisted Fixed-Abrasive CMP (UF-CMP)

Mirror Surface Finishing of Silicon Wafer Edge Using Ultrasonic Assisted Fixed-Abrasive CMP (UF-CMP).

Investigation of Material Removal Mechanism of Silicon Wafer in the Chemical Mechanical Polishing Process Using Molecular Dynamics Simulation Method

The Acoustic Micro Integrated Detection Technique for Silicon Wafer Processing

Fundamental Investigation Of Silicon Wafer Edge Treatment By Ultrasonically Assisted Polishing (Uap)

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Mechanism and Experimental Investigation on Silicon Wafer Hybrid Polishing by Ultrasonic-Elliptic-Vibration Chemical-Mechanical

Experimental Study on Shear Rheological Polishing of Si Surface of 4H-SiC Wafer

Polishing Characteristics on Silicon Wafer Using Fixed Nano-Sized Abrasive Pad

Unprecedented atomic surface of silicon induced by environmentally friendly chemical mechanical polishing

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Achievement of a near-perfect smooth silicon surface

Flatness Maintenance and Roughness Reduction of Silicon Mirror in Chemical Mechanical Polishing Process

Precision treatment of silicon wafer edge utilizing ultrasonically assisted polishing technique

Surface Quality Improvement of Atmospheric Pressure Plasma Polishing (appp) in Machining of Silicon Ultra-Smooth Surfaces